-
2
-
-
0032124118
-
Self-assembled semiconductor structures: Electronic and optoelectronic properties
-
July
-
H. Jiang and J. Singh, "Self-assembled semiconductor structures: electronic and optoelectronic properties," IEEE J. Quantum Electron., vol. 34, pp. 1188-1196, July 1998.
-
(1998)
IEEE J. Quantum Electron.
, vol.34
, pp. 1188-1196
-
-
Jiang, H.1
Singh, J.2
-
3
-
-
0034187417
-
Quantum-dot heterostructure lasers
-
May/June
-
N. N. Lendestov, M. Grundman, F. Heinrichsdorff, D. Bimberg, V. M. Ustinov, A. E. Zhukov, M. V. Maximiv, Z. I. Alferov, and J. A. Lott, "Quantum-dot heterostructure lasers," IEEE J. Select. Topics Quantum Electron., vol. 6, pp. 439-451, May/June 2000.
-
(2000)
IEEE J. Select. Topics Quantum Electron.
, vol.6
, pp. 439-451
-
-
Lendestov, N.N.1
Grundman, M.2
Heinrichsdorff, F.3
Bimberg, D.4
Ustinov, V.M.5
Zhukov, A.E.6
Maximiv, M.V.7
Alferov, Z.I.8
Lott, J.A.9
-
4
-
-
0034187125
-
Performance and physics of quantum dot lasers with self-assembled columnar-shape and 1.3 μm emitting InGaAs quantum dots
-
May/June
-
M. Sugawara, K. Mukai, Y. Nakata, K. Otsubo, and H. Ishikawa, "Performance and physics of quantum dot lasers with self-assembled columnar-shape and 1.3 μm emitting InGaAs quantum dots," IEEE J. Select. Topics Quantum Electron., vol. 6, pp. 462-474, May/June 2000.
-
(2000)
IEEE J. Select. Topics Quantum Electron.
, vol.6
, pp. 462-474
-
-
Sugawara, M.1
Mukai, K.2
Nakata, Y.3
Otsubo, K.4
Ishikawa, H.5
-
5
-
-
79956027571
-
0.6As/GaAs self-organized quantum dot lasers at room temperature
-
Oct.
-
0.6As/GaAs self-organized quantum dot lasers at room temperature," Appl. Phys. Lett., vol. 81, no. 16, pp. 3055-3057, Oct. 2002.
-
(2002)
Appl. Phys. Lett.
, vol.81
, Issue.16
, pp. 3055-3057
-
-
Ghosh, S.1
Pradhan, P.2
Bhatacharya, P.3
-
6
-
-
0034471014
-
Modal gain and T0 value improvements in quantum dot lasers using dots-in-a-well (DWELL) structure
-
G. T. Liu, H. Li, A. Stintz, T. C. Newell, L. F. Lester, and K. J. Malloy, "Modal gain and T0 value improvements in quantum dot lasers using dots-in-a-well (DWELL) structure," in Conf. Dig. IEEE 17th Int. Semiconductor Laser Conf., Sept. 25-28, 2000, pp. 133-136.
-
Conf. Dig. IEEE 17th Int. Semiconductor Laser Conf., Sept. 25-28, 2000
, pp. 133-136
-
-
Liu, G.T.1
Li, H.2
Stintz, A.3
Newell, T.C.4
Lester, L.F.5
Malloy, K.J.6
-
7
-
-
0035424150
-
Room-temperature operation of InAs quantum dash lasers on InP (001)
-
Aug.
-
R. H. Wang, A. Stintz, P. Varangis, T. Newell, H. Li, K. J. Malloy, and L. F. Lester, "Room-temperature operation of InAs quantum dash lasers on InP (001)," IEEE Photon. Technol. Lett., vol. 13, pp. 767-769, Aug. 2001.
-
(2001)
IEEE Photon. Technol. Lett.
, vol.13
, pp. 767-769
-
-
Wang, R.H.1
Stintz, A.2
Varangis, P.3
Newell, T.4
Li, H.5
Malloy, K.J.6
Lester, L.F.7
-
8
-
-
0036610067
-
Long-wavelength InP-based quantum dash lasers
-
June
-
R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, "Long-wavelength InP-based quantum dash lasers," IEEE Photon. Technol. Lett., vol. 14, pp. 735-737, June 2002.
-
(2002)
IEEE Photon. Technol. Lett.
, vol.14
, pp. 735-737
-
-
Schwertberger, R.1
Gold, D.2
Reithmaier, J.P.3
Forchel, A.4
-
9
-
-
0038782383
-
Light amplification in semiconductor nanocrystals: Quantum rods versus quantum dots
-
June
-
H. Htoon, J. Hollingworth, A. Malko, R. Dickerson, and V. Klimov, "Light amplification in semiconductor nanocrystals: quantum rods versus quantum dots," Appl. Phys. Lett., vol. 82, no. 26, pp. 4776-4778, June 2003.
-
(2003)
Appl. Phys. Lett.
, vol.82
, Issue.26
, pp. 4776-4778
-
-
Htoon, H.1
Hollingworth, J.2
Malko, A.3
Dickerson, R.4
Klimov, V.5
-
10
-
-
0032632767
-
Optical properties of 1.24 μm quantum dot lasers
-
L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, "Optical properties of 1.24 μm quantum dot lasers," IEEE Photon. Electron. Lett., vol. 11, pp. 931-933, 1999.
-
(1999)
IEEE Photon. Electron. Lett.
, vol.11
, pp. 931-933
-
-
Lester, L.F.1
Stintz, A.2
Li, H.3
Newell, T.C.4
Pease, E.A.5
Fuchs, B.A.6
Malloy, K.J.7
-
11
-
-
1942424470
-
Quantum dash devices
-
July 29
-
A. Stintz, P. Varangis, K. Malloy, L. Lester, T. Newell, and H. Li, "Quantum Dash Devices," U.S. Patent 6 600 169, July 29, 2003.
-
(2003)
U.S. Patent 6 600 169
-
-
Stintz, A.1
Varangis, P.2
Malloy, K.3
Lester, L.4
Newell, T.5
Li, H.6
-
12
-
-
84891879364
-
InAs on InP quantum dots for optoelectronic applications
-
J. P. Reithmaier, L. Bach, W. Kaiser, R. Schwetberger, A. Forchel, A. Bilenca, R. Alizon, V. Mikhelashvili, D. Dahan, and G. Eisenstein, "InAs on InP quantum dots for optoelectronic applications," in Proc. Eur. Conf. Lasers and Electro-Optics (CLEO-EUROPE), Munich, Germany, June 2003.
-
Proc. Eur. Conf. Lasers and Electro-Optics (CLEO-EUROPE), Munich, Germany, June 2003
-
-
Reithmaier, J.P.1
Bach, L.2
Kaiser, W.3
Schwetberger, R.4
Forchel, A.5
Bilenca, A.6
Alizon, R.7
Mikhelashvili, V.8
Dahan, D.9
Eisenstein, G.10
-
13
-
-
0037168175
-
InAs/InP 1550 nm quantum dash semiconductor optical amplifiers
-
Oct.
-
A. Bilenca, R. Alizon, V. Mikhelashvili, G. Eisenstein, R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, "InAs/InP 1550 nm quantum dash semiconductor optical amplifiers," Electron. Lett., vol. 38, no. 22, pp. 1350-1351, Oct. 2002.
-
(2002)
Electron. Lett.
, vol.38
, Issue.22
, pp. 1350-1351
-
-
Bilenca, A.1
Alizon, R.2
Mikhelashvili, V.3
Eisenstein, G.4
Schwertberger, R.5
Gold, D.6
Reithmaier, J.P.7
Forchel, A.8
-
14
-
-
0038046542
-
1.54 m single mode InP-based Q-dash lasers
-
to be published
-
L. Bach, W. Kaiser, R. Schwertberger, J. P. Reithmaier, and A. Forchel, "1.54 m single mode InP-based Q-dash lasers," Electron. Lett., to be published.
-
Electron. Lett.
-
-
Bach, L.1
Kaiser, W.2
Schwertberger, R.3
Reithmaier, J.P.4
Forchel, A.5
-
15
-
-
0034230209
-
150-nm tuning range in a grating-coupled external cavity quantum dot laser
-
July
-
H. Li, T. Liu, P. M. Varangis, T. C. Newell, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, "150-nm tuning range in a grating-coupled external cavity quantum dot laser," IEEE Photon. Technol. Lett., vol. 12, pp. 759-761, July 2000.
-
(2000)
IEEE Photon. Technol. Lett.
, vol.12
, pp. 759-761
-
-
Li, H.1
Liu, T.2
Varangis, P.M.3
Newell, T.C.4
Stintz, A.5
Fuchs, B.6
Malloy, K.J.7
Lester, L.F.8
-
16
-
-
0036478499
-
Quantum dot size variation and its impact on emission and and absorption characteristics: An experimental and theoretical modeling investigation
-
Feb.
-
D. Pal, V. G. Stoleru, E. Towe, and D. Firsov, "Quantum dot size variation and its impact on emission and and absorption characteristics: an experimental and theoretical modeling investigation," Jpn. J. Appl. Phys., vol. 1, no. 2A, pp. 482-489, Feb. 2002.
-
(2002)
Jpn. J. Appl. Phys.
, vol.41
, Issue.2 A
, pp. 482-489
-
-
Pal, D.1
Stoleru, V.G.2
Towe, E.3
Firsov, D.4
-
17
-
-
0032686563
-
Effect of size fluctuations on the photoluminescence spectral linewidth of closely stacked InAs self-assembled quantum dot structures
-
A. Endoh, Y. Nakata, Y. Sugiyama, M. Takatsu, and N. Yokoyama, "Effect of size fluctuations on the photoluminescence spectral linewidth of closely stacked InAs self-assembled quantum dot structures," Jpn. J. Appl. Phys., vol. 38, no. 2B, pp. 1085-1089.
-
Jpn. J. Appl. Phys.
, vol.38
, Issue.2 B
, pp. 1085-1089
-
-
Endoh, A.1
Nakata, Y.2
Sugiyama, Y.3
Takatsu, M.4
Yokoyama, N.5
-
18
-
-
0043028388
-
Effect of inhomogeneous line broadening on gain and differential gain of quantum dot lasers
-
July
-
O. Qasaimeh, "Effect of inhomogeneous line broadening on gain and differential gain of quantum dot lasers," IEEE Trans. Electron. Devices, vol. 50, pp. 1575-1581, July 2003.
-
(2003)
IEEE Trans. Electron. Devices
, vol.50
, pp. 1575-1581
-
-
Qasaimeh, O.1
-
19
-
-
0030128727
-
Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser
-
L. V. Asryan and R. A. Suris, "Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser," Semicond. Sci. Technol., vol. 11, pp. 554-567, 1996.
-
(1996)
Semicond. Sci. Technol.
, vol.11
, pp. 554-567
-
-
Asryan, L.V.1
Suris, R.A.2
-
20
-
-
0037767883
-
Cross gain modulation in inhomogeneously broadened gain spectra of InP based-1550 nm quantum-dash optical amplifiers: Small signal bandwidth dependence on wavelength detuning
-
June
-
R. Alizon, A. Bilenca, H. Dery, V. Mikhelavishli, G. Eisenstein, R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, "Cross gain modulation in inhomogeneously broadened gain spectra of InP based-1550 nm quantum-dash optical amplifiers: small signal bandwidth dependence on wavelength detuning," Appl. Phys. Lett., vol. 82, no. 26, pp. 4660-4662, June 2003.
-
(2003)
Appl. Phys. Lett.
, vol.82
, Issue.26
, pp. 4660-4662
-
-
Alizon, R.1
Bilenca, A.2
Dery, H.3
Mikhelavishli, V.4
Eisenstein, G.5
Schwertberger, R.6
Gold, D.7
Reithmaier, J.P.8
Forchel, A.9
-
21
-
-
0000421379
-
1-xAs/GaAs quantum dot lasers
-
Mar.
-
1-xAs/GaAs quantum dot lasers," Phys. Rev. B, vol. 61, pp. 7595-7603, Mar. 2000.
-
(2000)
Phys. Rev. B
, vol.61
, pp. 7595-7603
-
-
Sugawara, M.1
Mukai, K.2
Nakata, Y.3
Ishikawa, H.4
-
22
-
-
0001100515
-
Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics
-
Mar.
-
M. Sugawara, K. Mukai, and Y. Nakata, "Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: effect of homogeneous broadening of the optical gain on lasing characteristics," Appl. Phys. Lett., vol. 74, pp. 1561-1563, Mar. 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 1561-1563
-
-
Sugawara, M.1
Mukai, K.2
Nakata, Y.3
-
23
-
-
0036901858
-
Modulation characteristics of quantum-dot lasers: The influence of p-type doping and the electronic density of states on obtaining high speed
-
Dec
-
D. G. Deppe, H. Huang, and O. B. Shchekin, "Modulation characteristics of quantum-dot lasers: the influence of p-type doping and the electronic density of states on obtaining high speed," IEEE J. Quantum Electron., vol. 38, pp. 1587-1593, Dec, 2002.
-
(2002)
IEEE J. Quantum Electron.
, vol.38
, pp. 1587-1593
-
-
Deppe, D.G.1
Huang, H.2
Shchekin, O.B.3
-
25
-
-
0001697803
-
Comparison of k · p and direct diagonalization approaches to the electronic structure of InAs/GaAs quantum dots
-
Jan.
-
L. W. Wang, A. J. Williamson, A. Zunger, H. Jiang, and J. Singh, "Comparison of k · p and direct diagonalization approaches to the electronic structure of InAs/GaAs quantum dots," Appl. Phys. Lett., vol. 76, no. 3, pp. 339-341, Jan. 2000.
-
(2000)
Appl. Phys. Lett.
, vol.76
, Issue.3
, pp. 339-341
-
-
Wang, L.W.1
Williamson, A.J.2
Zunger, A.3
Jiang, H.4
Singh, J.5
-
26
-
-
0001558745
-
InAs/GaAs pyramidal quantum dots: Strain distribution, optical photons and electronic structure
-
Oct.
-
M. Grundmann, O. Stier, and D. Bimberg, "InAs/GaAs pyramidal quantum dots: strain distribution, optical photons and electronic structure," Phys. Rev. B, vol. 52, no. 11, pp. 11 969-11 981, Oct. 1995.
-
(1995)
Phys. Rev. B
, vol.52
, Issue.16
, pp. 11969-11981
-
-
Grundmann, M.1
Stier, O.2
Bimberg, D.3
-
27
-
-
84892274867
-
Gain and threshold of three-dimensional quantum-box lasers
-
Sept.
-
M. Asada, Y. Miyamoto, and Y. Suematsu, "Gain and threshold of three-dimensional quantum-box lasers," IEEE J. Quantum Electron., vol. QE-22, pp. 1915-1921, Sept. 1986.
-
(1986)
IEEE J. Quantum Electron.
, vol.QE-22
, pp. 1915-1921
-
-
Asada, M.1
Miyamoto, Y.2
Suematsu, Y.3
-
32
-
-
0033171401
-
Spontaneous emission and threshold characteristics of 1.3 μm InGaAs-GaAs quantum dot GaAs-based laser
-
Aug.
-
D. G. Deppe, D. L. Huffaker, S. Csutak, Z. Zou, G. Park, and O. B. Shchekin, "Spontaneous emission and threshold characteristics of 1.3 μm InGaAs-GaAs quantum dot GaAs-based laser," IEEE J. Quantum Electron., vol. 35, pp. 1238-1246, Aug. 1999.
-
(1999)
IEEE J. Quantum Electron.
, vol.35
, pp. 1238-1246
-
-
Deppe, D.G.1
Huffaker, D.L.2
Csutak, S.3
Zou, Z.4
Park, G.5
Shchekin, O.B.6
-
33
-
-
0035338668
-
Rate equation model for nonequilibrium operating conditions in a self-organized quantum-dot laser
-
May
-
H. Huang and D. G. Deppe, "Rate equation model for nonequilibrium operating conditions in a self-organized quantum-dot laser," IEEE J. Quantum Electron., vol. 37, pp. 691-698, May 2001.
-
(2001)
IEEE J. Quantum Electron.
, vol.37
, pp. 691-698
-
-
Huang, H.1
Deppe, D.G.2
-
34
-
-
0032607437
-
Nonequilibrium distribution in quantum dots lasers and influence on laser spectral output
-
May
-
H. Jiang and J. Singh, "Nonequilibrium distribution in quantum dots lasers and influence on laser spectral output," J. Appl. Phys., vol. 85, no. 10, pp. 7438-7442, May 1999.
-
(1999)
J. Appl. Phys.
, vol.85
, Issue.10
, pp. 7438-7442
-
-
Jiang, H.1
Singh, J.2
-
35
-
-
11144358402
-
On the nature of InAs/InP quantum dash gain media
-
paper We2.5.4
-
H. Dery, E. Benisty, A. Epstein, R. Alizon, V. Mikhelashvili, G. Eisenstein, R. Schwertberger, D. Gold, J. P. Reithmaier, and A. Forchel, "On the nature of InAs/InP quantum dash gain media," in Proc. Eur. Conf. Optical Communications, Rimini, Italy, Sept. 2003, paper We2.5.4.
-
Proc. Eur. Conf. Optical Communications, Rimini, Italy, Sept. 2003
-
-
Dery, H.1
Benisty, E.2
Epstein, A.3
Alizon, R.4
Mikhelashvili, V.5
Eisenstein, G.6
Schwertberger, R.7
Gold, D.8
Reithmaier, J.P.9
Forchel, A.10
-
37
-
-
0028378499
-
Band lineup and in-plane effective mass of InGaAsP or InGaAlAs on InP strained-layer quantum well
-
Feb.
-
T. Ishikawa and J. E. Bowers, "Band lineup and in-plane effective mass of InGaAsP or InGaAlAs on InP strained-layer quantum well," IEEE J. Quantum Electron., vol. 30, pp. 562-570, Feb. 1994.
-
(1994)
IEEE J. Quantum Electron.
, vol.30
, pp. 562-570
-
-
Ishikawa, T.1
Bowers, J.E.2
|