Correlation between the gain profile and the temperature-induced shift in wavelength of quantum-dot lasers

Applied Physics Letters

Volumn 81, Issue 2, 2002, Pages 217-219

  Klopf, F ^a   Deubert, S ^a   Reithmaier, J P ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY DESIGN; DESIGN PARAMETERS; EMISSION WAVELENGTH; GAAS; GAIN FUNCTION; SIMPLIFIED MODELS; TEMPERATURE STABILITY; TEMPERATURE-INDUCED; WAVELENGTH SHIFT;

GALLIUM ARSENIDE; QUANTUM DOT LASERS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM WELL LASERS;

EID: 79955990287     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1491612     Document Type: Article

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