Wavelength tuning of InAs quantum dots grown on (311)B InP

Applied Physics Letters

Volumn 74, Issue 22, 1999, Pages 3356-3358

  Frechengues S ^a   Bertru, N ^a   Drouot, V ^a   Lambert, B ^a   Robinet, S ^a   Loualiche, S ^a   Lacombe, D ^b   Ponchet, A ^b  

^a INSA DE RENNES   (France)

^b CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; EMISSION SPECTROSCOPY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; TUNING;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); INDIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0038040419     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123343     Document Type: Article

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