1.3-γm CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots

IEEE Journal of Quantum Electronics

Volumn 36, Issue 4, 2000, Pages 472-478

  Mukai, K ^a   Nakata, Y ^a   Otsubo, K ^a   Sugawara, M ^a   Yokoyama, N ^a   Ishikawa, H ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CRYSTAL GROWTH; ELECTRIC CURRENTS; LASER RESONATORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

SELF-ASSEMBLED QUANTUM DOTS;

SEMICONDUCTOR LASERS;

EID: 0033894734     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.831025     Document Type: Article

References (29)

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