Analysis of copper-rich precipitates in silicon: Chemical state, gettering, and impact on multicrystalline silicon solar cell material

Journal of Applied Physics

Volumn 97, Issue 6, 2005, Pages

  Buonassisi, Tonio ^a,b   Marcus, Matthew A ^b   Istratov, Andrei A ^a,b   Heuer, Matthias ^b,c   Ciszek, Theodore F ^d   Lai, Barry ^e   Cai, Zhonghou ^e   Weber, Eicke R ^b,f  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF LEIPZIG   (Germany)

^d Siliconsultant   (United States)

^e ARGONNE NATIONAL LABORATORY   (United States)

^f Siliconsultant ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE STATES; LATTICE STRAINS; MULTICRYSTALLINE SILICON SOLAR CELL MATERIALS; X-RAY ABSORPTION MICROSPECTROSCOPY (Μ-XAS);

ABSORPTION SPECTROSCOPY; CHEMICAL BONDS; CRYSTALLINE MATERIALS; FLUORESCENCE; SILICON; SOLAR CELLS; SOLUBILITY; SYNCHROTRONS; THERMODYNAMICS; X RAY SPECTROSCOPY;

PRECIPITATION (CHEMICAL);

EID: 20644448602     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1827913     Document Type: Article

References (68)

1. R. N. Hall and J. H. Racette, J. Appl. Phys. 35, 379 (1964).
2. E. R. Weber, Appl. Phys. A: Solids Surf. 30, 1 (1983).
3. A. A. Istratov, C. Flink, H. Hieslmair, E. R. Weber, and T. Heiser, Phys. Rev. Lett. 81, 1243 (1998).
4. A. A. Istratov and E. R. Weber, J. Electrochem. Soc. 149, G21 (2002).
5. S. K. Estreicher, Phys. Rev. B 60, 5375 (1999).
6. J.-L. Maurice and C. Colliex, Appl. Phys. Lett. 55, 241 (1989).
7. A. Broniatowski, Philos. Mag. B 66, 767 (1992).
8. A. A. Istratov, J. Electrochem. Soc. 145, 3889 (1998).
9. M. Seibt, H. Hedemann, A. A. Istratov, F. Riedel, A. Sattler, and W. Schröter, Phys. Status Solidi A 171, 301 (1999).
10. R. Sachdeva, A. A. Istratov, and E. R. Weber, Appl. Phys. Lett. 79, 2937 (2001).
11. M. Seibt, in Crystalline Defects and Contamination: Their Impact and Control in Device Manufacturing II, edited by, B. O. Kolbesen, C. Claeys, P. Stallhofer, and, F. Tardif, (The Electrochem. Soc., Pennington, 1997), p. 243.
12. M. Seibt, in Semiconductor Silicon 1990, edited by, H. R. Huff, K. G. Barraclough, and, J. I. Chikawa, (The Electrochem. Soc., Pennington, 1990), p. 663.
13. M. Seibt and K. Graff, J. Appl. Phys. 63, 4444 (1988).
14. C. Flink, H. Feick, S. A. McHugo, W. Seifert, H. Hieslmair, T. Heiser, A. A. Istratov, and E. R. Weber, Phys. Rev. Lett. 85, 4900 (2000).
15. W. C. Dash, J. Appl. Phys. 27, 1193 (1956).
16. B. Shen, T. Sekiguchi, J. Jablonski, and K. Sumino, J. Appl. Phys. 76, 4540 (1994).
17. W. C. Dash, J. Appl. Phys. 30, 459 (1959).
18. A. J. R. de Kock, Appl. Phys. Lett. 16, 100 (1970).
19. J. P. Kalejs, B. Bathey, and C. Dub́, J. Cryst. Growth 109, 174 (1991).
20. Report IEA-PVPS T1-12:2003, International Energy Agency-Photovoltaic Power Systems Programme, 2003 (in press).
21. S. A. McHugo, Appl. Phys. Lett. 71, 1984 (1997).
22. S. A. McHugo, J. Appl. Phys. 89, 4282 (2001).
23. A. A. Istratov, H. Hieslmair, O. F. Vyvenko, E. R. Weber, and R. Schindler, Sol. Energy Mater. Sol. Cells 72, 441 (2002).
24. A. A. Istratov, T. Buonassisi, R. J. McDonald, A. R. Smith, R. Schindler, J. A. Rand, J. P. Kalejs, and E. R. Weber, J. Appl. Phys. 94, 6552 (2003).
25. T. Buonassisi, J. Appl. Phys. 95, 1556 (2004).
26. D. Macdonald, A. Cuevas, A. Kinomura, and Y. Nakano, in 29th Photovoltaic Specialists Conference Proceedings (IEEE, New Orleans, USA, 2002), p. 285.
27. S. A. McHugo, A. Mohammed, A. C. Thompson, B. Lai, and Z. Cai, J. Appl. Phys. 91, 6396 (2002).
28. E. Nes and J. Washburn, J. Appl. Phys. 43, 2005 (1972).
29. G. Das, J. Appl. Phys. 44, 4459 (1973).
30. E. Nes and G. Lunde, J. Appl. Phys. 43, 1835 (1972).
31. J. K. Solberg, Acta Crystallogr., Sect. A: Cryst. Phys., Diffr., Theor. Gen. Crystallogr. 34, 684 (1978).
32. R. Rizk, X. Portier, G. Allais, and G. Nouet, J. Appl. Phys. 76, 952 (1994).
33. M. Seibt, M. Griess, A. A. Istratov, H. Hedemann, A. Sattler, and W. Schröter, Phys. Status Solidi A 166, 171 (1998).
34. R. D. Thompson and K. N. Tu, Appl. Phys. Lett. 41, 440 (1982).
35. L. A. Verhoef, P. P. Michiels, S. Roorda, W. C. Sinke, and R. J. C. Van Zolingen, Mater. Sci. Eng., B 7, 49 (1990).
36. H. Hieslmair, S. A. McHugo, and E. R. Weber, in 25th IEEE Photovoltaic Specialists Conference (IEEE, Washington D.C., 1996), p. 441.
37. G. A. Petersen and S. M. Myers, J. Appl. Phys. 89, 4269 (2001).
38. T. F. Ciszek and T. H. Wang, J. Cryst. Growth 237-239, 1685 (2002).
39. M. Kittler, C. Ulhaq-Bouillet, and V. Higgs, J. Appl. Phys. 78, 4573 (1995).
40. T. Buonassisi, Physica B 340-342, 1137 (2003).
41. J. H. Underwood, A. C. Thompson, Y. Wu, R. D. Giauque, K. W. Jones, and M. L. Rivers, Nucl. Instrum. Methods Phys. Res. A 266, 318 (1988).
42. A. Manceau, M. A. Marcus, and N. Tamura, in Applications of Synchrotron Radiation in Low-temperature Geochemistry and Environmental Science, edited by, P. Fenter, and, N. C. Sturchio, (Mineralogical Society of America, Washington D.C., 2002), Vol. 49, p. 341.
43. M. A. Marcus, A. A. MacDowell, R. Celestre, A. Manceau, T. Miller, H. A. Padmore, and R. E. Sublett, J. Synchrotron Radiat. 11, 239 (2004).
44. W. Yun, Rev. Sci. Instrum. 70, 2238 (1999).
45. Z. Cai, B. Lai, W. Yun, P. Ilinski, D. Legnini, J. Maser, and W. Rodrigues, AIP Conf. Proc. 521, 31 (2000).
46. O. F. Vyvenko, T. Buonassisi, A. A. Istratov, H. Hieslmair, A. C. Thompson, R. Schindler, and E. R. Weber, J. Appl. Phys. 91, 3614 (2002).
47. O. F. Vyvenko, T. Buonassisi, A. A. Istratov, and E. R. Weber, J. Phys.: Condens. Matter 16, S141 (2003).
48. B. Shen, T. Sekiguchi, R. Zhang, Y. Shi, H. Shi, K. Yang, Y. Zheng, and K. Sumino, Jpn. J. Appl. Phys., Part 1 35, 3301 (1996).
49. T. S. Fell and P. R. Wilshaw, J. Phys. IV 1, C6 (1991).
50. D. M. Lee and G. A. Rozgonyi, Appl. Phys. Lett. 65, 350 (1994).
51. G. Kissinger, G. Morgenstern, and H. Richter, J. Appl. Phys. 75, 4994 (1994).
52. O. F. Vyvenko, T. Buonassisi, A. A. Istratov, E. R. Weber, M. Kittler, and W. Seifert, J. Phys.: Condens. Matter 14, 13079 (2002).
53. G. H. Schwuttke, J. Electrochem. Soc. 108, 163 (1961).
54. S. A. McHugo, J. Cryst. Growth 210, 395 (2000).
55. N. T. Barrett, P. N. Gibson, G. N. Greaves, P. Mackle, K. J. Roberts, and M. Sacchi, J. Phys. D 22, 542 (1989).
56. S. A. McHugo, A. C. Thompson, G. Lamble, C. Flink, and E. R. Weber, Physica B 273-274, 371 (1999).
57. L. Magaud, S. Guillet, and T. Lopez-Rios, Physica B 225, 225 (1996).
58. A. Cros, M. O. Aboelfotoh, and K. N. Tu, J. Appl. Phys. 67, 3328 (1990).
59. Z. An, C. Kamezawa, M. Hirai, M. Kusaka, and M. Iwami, J. Phys. Soc. Jpn. 71, 2948 (2002).
60. D. West, S. K. Estreicher, S. Knack, and J. Weber, Phys. Rev. B 68, 035210 (2003).
61. S. P. Murarka and C. C. Chang, Appl. Phys. Lett. 37, 639 (1980).
62. T. Buonassisi, in 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes, edited by, B. Sopori, (NREL, Golden, CO, 2003), p. 96.
63. F. M. d'Heurle, A. Cros, R. D. Frampton, and E. A. Irene, Philos. Mag. B 55, 291 (1987).
64. M. A. Marcus and J. E. Bower, J. Appl. Phys. 82, 3821 (1997).
65. M. Apel, I. Hanke, R. Schindler, and W. Schröter, J. Appl. Phys. 76, 4432 (1994).
66. H. Hieslmair, S. A. McHugo, A. A. Istratov, and E. R. Weber, in Properties of Crystalline Silicon, edited by, R. Hull, (INSPEC, Exeter, 1999), p. 775.
67. M. Kittler and W. Seifert, Solid State Phenom. 95-96, 197 (2004).
68. CRC Handbook of Chemistry and Physics, edited by, David R. Lide, (CRC, Boca Raton, 2003), 84th ed.