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Journal of Crystal Growth

Volumn 237-239, Issue 1-4 III, 2002, Pages 1685-1691

Silicon defect and impurity studies using float-zone crystal growth as a tool

(2) Ciszek, T F a Wang, T H a

a NATIONAL RENEWABLE ENERGY LABORATORY (United States)

Author keywords

A1. Defects; A1. Impurities; A1. Point defects; A2. Floating zone technique; B2. Semiconducting silicon

Indexed keywords

CHARGE CARRIERS; CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); GRAIN SIZE AND SHAPE; PHOTOCONDUCTIVITY; PHOTOVOLTAIC EFFECTS; POINT DEFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SOLAR CELL ARRAYS;

FLOAT ZONE CRYSTAL GROWTH;

CRYSTAL GROWTH FROM MELT;

EID: 0036530998 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)02325-9 Document Type: Article

Times cited : (23)

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2
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6
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.