Formation and properties of copper silicide precipitates in silicon

Physica Status Solidi (A) Applied Research

Volumn 166, Issue 1, 1998, Pages 171-182

  Seibt, M ^a   Griess, M ^a   Istratov, A A ^a,b   Hedemann, H ^a   Sattler, A ^a   Schroter W ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COOLING; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC PROPERTIES; PRECIPITATION (CHEMICAL); QUENCHING; SILICON; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

COPPER SILICIDE;

COPPER COMPOUNDS;

EID: 0032027032     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199803)166:1<171::AID-PSSA171>3.0.CO;2-2     Document Type: Article

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