Copper precipitates in silicon: Precipitation, dissolution, and chemical state

Journal of Applied Physics

Volumn 91, Issue 10 I, 2002, Pages 6396-6405

  McHugo, Scott A ^a   Mohammed, A ^a   Thompson, A C ^a   Lai, B ^b   Cai, Z ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE DEVICES; CHEMICAL STATE; COPPER IMPURITIES; COPPER PRECIPITATE; COPPER PRECIPITATION; DISSOLUTION PROCESS; INTEGRATED CIRCUIT DEVICES; INTEGRATED-CIRCUIT PROCESSING; OXYGEN PRECIPITATES; SILICON INTEGRATED CIRCUITS; THERMAL BUDGET;

COPPER; DISSOLUTION; IMPURITIES; INTEGRATED CIRCUITS; OXYGEN;

PRECIPITATION (CHEMICAL);

EID: 0037094572     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1471944     Document Type: Article

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