Estimation of the Upper Limit of the Minority-Carrier Diffusion Length in Multicrystalline Silicon: Limitation of the Action of Gettering and Passivation on Dislocations

Solid State Phenomena

Volumn 95-96, Issue , 2004, Pages 197-204

  Kittler, M ^a   Seifert, W ^a  

^a IHP ^*  (Germany)

Author keywords

Diffusion Length; Dislocations; DLTS; EBIC; Gettering; Hydrogen Passivation; Multicrystalline Silicon

Indexed keywords

CHARGE CARRIERS; CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); PASSIVATION; PHOTOLUMINESCENCE; THERMAL EFFECTS;

GETTERING; HYDROGEN PASSIVATION;

SILICON;

EID: 1642560912     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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