Electrical and recombination properties of copper-suicide precipitates in silicon

Journal of the Electrochemical Society

Volumn 145, Issue 11, 1998, Pages 3889-3898

  Istratov, A A ^a,c   Hedemann, H ^b   Seibt, M ^b   Vyvenko, O F ^b,c   Schroter W ^b   Heiser, T ^a   Flink, C ^a   Hieslmair, H ^a   Weber, E R ^a  

^a University of California ^*  (United States)

^b ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^c UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; COMPUTER SIMULATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION; ELECTRIC PROPERTIES; PRECIPITATION (CHEMICAL); QUENCHING; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

CAPACITANCE SPECTROSCOPY; DEFECT BAND; MINORITY CARRIER TRANSIENT SPECTROSCOPY; RECOMBINATION PROPERTIES;

COPPER ALLOYS;

EID: 0032203340     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838889     Document Type: Article

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