SCOPUS 정보 검색 플랫폼

Volumn 79, Issue 3, 2001, Pages 368-370

Computational band-structure engineering of III-V semiconductor alloys

(8) Geller, Clint B a Wolf, Walter b Picozzi, Silvia c Continenza, Alessandra c Asahi, Ryoji d Mannstadt, Wolfgang d Freeman, Arthur J d Wimmer, Erich e

a BETTIS ATOMIC POWER LABORATORY (United States)

b Materials Design (France)

c UNIVERSITY OF L'AQUILA (Italy)

d NORTHWESTERN UNIVERSITY (United States)

e Institute Superieur des Materiaux du Mans (France)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; ELECTRON MOBILITY; GROUND STATE; GUNN EFFECT; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS;

BINARY SEMICONDUCTORS; CONDUCTION BAND (CB);

BINARY ALLOYS;

EID: 0035898421 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1383282 Document Type: Article

Times cited : (108)

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