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Volumn , Issue , 2004, Pages 829-832
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Impact of oxygen vacancies on high-κ gate stack engineering
a
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Author keywords
[No Author keywords available]
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Indexed keywords
GATE STACK ENGINEERING;
GATE-DIELECTRIC INTERFACES;
OXYGEN VACANCIES;
THERMAL PROCESSING;
BOTTOM GATE;
FERMI LEVEL PINNING;
HIGH-Κ GATE STACK;
INTERFACIAL LAYER;
LAYER FORMATION;
MATERIAL SYSTEMS;
OXYGEN TRANSPORT;
TOP GATE;
ANNEALING;
CARRIER MOBILITY;
FERMI LEVEL;
GATES (TRANSISTOR);
HAFNIUM COMPOUNDS;
LEAKAGE CURRENTS;
OXYGEN;
PHONONS;
SILICON;
THERMODYNAMICS;
DIELECTRIC MATERIALS;
GATE DIELECTRICS;
HAFNIUM OXIDES;
INTERFACES (MATERIALS);
MOS DEVICES;
DIELECTRIC DEVICES;
OXYGEN VACANCIES;
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EID: 17644422666
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (53)
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References (24)
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