Nanoscale spatial phase modulation of GaN on a V-grooved Si substrate - Cubic phase GaN on Si(001) for monolithic integration

IEEE Journal of Quantum Electronics

Volumn 41, Issue 4, 2005, Pages 596-605

  Lee, S C ^a   Pattada, B ^a   Hersee, Stephen D ^a   Jiang, Ying Bing ^a   Brueck, S R J ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

GaN on Si; Nanofaceting; Phase transition

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; PHASE MODULATION; PHASE TRANSITIONS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SILICON; STRESSES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

MONOLITHIC INTEGRATION; NANOFACETING; NANOSCALE SPATIAL PHASE MODULATION; STRESS MEASUREMENT;

GALLIUM NITRIDE;

EID: 17744400554     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2005.843605     Document Type: Article

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