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Applied Physics Letters

Volumn 79, Issue 10, 2001, Pages 1459-1461

Growth of crack-free hexagonal GaN films on Si(100)

(5) Wan, J a Venugopal, R a Melloch, M R a Liaw, H M b Rummel, W J b

a PURDUE UNIVERSITY (United States)

b MOTOROLA INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347713749 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1400770 Document Type: Article

Times cited : (35)

References (13)

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