Stability investigation of cubic GaN films grown by metalorganic chemical vapor deposition on GaAs (001)

Applied Physics Letters

Volumn 74, Issue 19, 1999, Pages 2827-2829

  Sun, X L ^a   Yang, Hui ^a   Zheng, L X ^a   Xu, D P ^a   Li, J B ^a   Wang, Y T ^a   Li, G H ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

CUBIC GALLIUM NITRIDE; PHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 0032621676     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124027     Document Type: Article

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