Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire

Applied Physics Letters

Volumn 83, Issue 4, 2003, Pages 677-679

  Zhao, D G ^a   Xu, S J ^a   Xie, M H ^a   Tong, S Y ^a   Yang, Hui ^b  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOLUMINESCENCE; RAMAN SCATTERING; SAPPHIRE; SILICON; SILICON CARBIDE; STRAIN; STRESS ANALYSIS; SUBSTRATES;

STRESS STATES;

GALLIUM NITRIDE;

EID: 0041511976     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1592306     Document Type: Article

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