Direct evidence of tensile strain in wurtzite structure n-GaN layers grown on n-Si(111) using AlN buffer layers

Physical Review B - Condensed Matter and Materials Physics

Volumn 60, Issue 24, 1999, Pages 16741-16746

  Bairamov, B H ^a,b   Gurdal O ^a   Botchkarev, A ^a   Morkoc H ^a   Irmer, G ^c   Monecke, J ^c  

^a VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

^c TU BERGAKADEMIE FREIBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 10044285693     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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