Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si

MRS Internet Journal of Nitride Semiconductor Research

Volumn 3, Issue , 1998, Pages

  Godlewski, M ^a   Goldys, E M ^b   Philips, M R ^c   Bergman, J P ^d   Monemar, B ^d   Langer, R ^e   Barski, A ^e  

^a INSTITUTE OF PHYSICS   (Poland)

^b MACQUARIE UNIVERSITY   (Australia)

^c University of Technology

^d LINKÖPING UNIVERSITY   (Sweden)

^e CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ATOMIC FORCE MICROSCOPY; ELLIPSOMETRY; ETCHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDATION; SINGLE CRYSTALS; SURFACE ROUGHNESS; THICK FILMS; THIN FILMS;

EXPERIMENTAL ERRORS; HETERO-EPITAXIAL LAYERS; ROOM TEMPERATURE; SPECTROSCOPIC ELLIPSOMETRY (SE);

GALLIUM NITRIDE;

EID: 4043182625     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/S109257830000123X     Document Type: Article

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