RECENT ADVANCES IN III-V NITRIDE ELECTRON DEVICES

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 27-30

  Khan, M Asif ^a   Chen, Q ^a   Yang, J ^a   Anwar, M Z ^a   Blasingame, M ^a   Shur, Michael S ^b   Burm, J ^c   Eastman, L F ^c  

^a APA Optronics   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; CARRIER CONCENTRATION; CUTOFF FREQUENCY; ELECTRON GAS; ENERGY GAP; GALLIUM ARSENIDE; HIGH ELECTRON MOBILITY TRANSISTORS; HVDC POWER TRANSMISSION; III-V SEMICONDUCTORS; INTELLIGENT SYSTEMS; JUNCTION GATE FIELD EFFECT TRANSISTORS; MONTE CARLO METHODS; WIDE BAND GAP SEMICONDUCTORS; COMPUTER SIMULATION; ELECTRON SCATTERING; HIGH TEMPERATURE APPLICATIONS; NATURAL FREQUENCIES; NITRIDES; OSCILLATIONS; SEMICONDUCTING GALLIUM COMPOUNDS;

DOPED CHANNELS; FIELD-EFFECT TRANSISTOR; HIGH FREQUENCY OPERATION; HIGH POWER; HIGH-TEMPERATURE OPERATION; HIGH-VOLTAGES; III-V NITRIDES; MONTE CARLO'S SIMULATION; PERFORMANCE; WIDE-BAND-GAP SEMICONDUCTOR;

GALLIUM NITRIDE; FIELD EFFECT TRANSISTORS;

ALUMINUM GALLIUM NITRIDES; ELECTRON MOBILITY; GALLIUM NITRIDE; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; TWO DIMENSIONAL ELECTRON GAS;

EID: 0030415753     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553114     Document Type: Conference Paper

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