Growth of GaN on a nanoscale periodic faceted Si substrate by metal organic vapor phase epitaxy

IEEE International Symposium on Compound Semiconductors, Proceedings

Volumn 2003-August, Issue , 2003, Pages 15-21

  Lee, S C ^a   Sun, X Y ^a   Hersee, S D ^a   Lee, J ^a   Ziang, Y B ^b   Xu, H ^b   Brueck, S R J ^a  

^a University of New Mexico   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; DEFECT DENSITY; EPITAXIAL GROWTH; GALLIUM NITRIDE; LATTICE MISMATCH; NANOTECHNOLOGY; ORGANOMETALLICS; SILICON; STACKING FAULTS; SUBSTRATES; VAPOR PHASE EPITAXY; WIDE BAND GAP SEMICONDUCTORS;

HEXAGONAL PHASE; LARGE LATTICE MISMATCH; LATERAL GROWTH; LATERAL OVERGROWTH; METAL-ORGANIC VAPOR PHASE EPITAXY; SI (001) SUBSTRATE; SI SUBSTRATES; SI(001) SURFACES;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 84979255669     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCSPC.2003.1354425     Document Type: Conference Paper

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