Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate

Semiconductor Science and Technology

Volumn 14, Issue 4, 1999, Pages 318-322

  Tabata, A ^a,b   Lima, A P ^a   Leite, J R ^a   Lemos, V ^c   Schikora, D ^d   Schottker B ^d   Kohler U ^d   As, D J ^d   Lischka, K ^d  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

^c UNIVERSITY OF CAMPINAS   (Brazil)

^d UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

INCLUSIONS; MELTING; MOLECULAR BEAM EPITAXY; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

DARK DOTS; GALLIUM NITRIDE;

SEMICONDUCTOR GROWTH;

EID: 0032688538     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/4/005     Document Type: Article

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