Basic studies of molecular beam epitaxy - Past, present and some future directions

Journal of Crystal Growth

Volumn 264, Issue 4, 2004, Pages 605-619

  Joyce, Bruce A ^a   Joyce, Tim B ^b  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

A1. Nucleation; A1. Reflection high energy electron diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials; B2. Semiconducting silicon

Indexed keywords

NITRIDES; NUCLEATION; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SYNTHESIS (CHEMICAL); VACUUM;

GROWTH PHENOMENA; HOMOEPITAXIAL FILMS;

MOLECULAR BEAM EPITAXY;

EID: 1642617562     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.12.045     Document Type: Conference Paper

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