Theoretical study of the energetics, strain fields, and semicoherent interface structures in layer-by-layer semiconductor heteroepitaxy

Journal of Applied Physics

Volumn 85, Issue 7, 1999, Pages 3677-3695

  Zepeda Ruiz, Luis A ^a   Maroudas, Dimitrios ^a   Weinberg, W Henry ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FUNCTIONS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MORPHOLOGY; POTENTIAL ENERGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN;

ATOMISTIC SIMULATIONS; CONTINUUM ELASTICITY THEORY; HETEROEPITAXY; INDIUM ARSENIDE;

SEMICONDUCTING FILMS;

EID: 0032608315     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369733     Document Type: Article

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