Optical reflectivity studies of GaN and AlN chemical beam epitaxy on GaAs(100)

Diamond and Related Materials

Volumn 8, Issue 2-5, 1999, Pages 373-376

  Chalker, P R ^a   Joyce, T B ^a   Farrell, T ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

Chemical Beam Epitaxy; DOR; Nitrides; RAS

Indexed keywords

ALUMINUM COMPOUNDS; ANISOTROPY; CHEMICAL BEAM EPITAXY; DEPOSITION; EVAPORATION; GALLIUM COMPOUNDS; LIGHT REFLECTION; NITRIDES; NITROGEN; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS; THIN FILMS;

ALUMINUM NITRIDE; GALLIUM NITRIDE; REFLECTION ANISOTROPY SPECTROSCOPY;

OPTICAL COATINGS;

EID: 0032614953     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(98)00374-4     Document Type: Article

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