Arsenic incorporation kinetics in GaAs(001) homoepitaxy revisited

Surface Science

Volumn 374, Issue 1-3, 1997, Pages 397-405

  Tok, E S ^a   Neave, J H ^a   Zhang, J ^a   Joyce, B A ^a   Jones, T S ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Adsorption kinetics; Epitaxy; Gallium arsenide; Growth; Molecular beam epitaxy; Reflection high energy electron diffraction (RHEED); Semiconducting films; Semiconducting surfaces

Indexed keywords

ARSENIC; EPITAXIAL GROWTH; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; THERMAL EFFECTS;

ADSORPTION KINETICS; MOLECULAR ADSORPTION;

ADSORPTION;

EID: 0031098131     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)01241-7     Document Type: Article

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