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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 3 A/B, 2000, Pages

Characterization of polarity of wurtzite GaN film grown by molecular beam epitaxy using NH3

(5) Sonoda, Saki a Shimizu, Saburo a Shen, Xu Qiang b Hara, Shiro b Okumura, Hajime b

a ULVAC INC (Japan)

b ELECTROTECHNICAL LABORATORY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; COMPUTER SIMULATION; FILM GROWTH; HEATING; ION BEAMS; LOW TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; NITRIDING; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

ION SCATTERING SPECTROSCOPY; NITROGEN PLASMA; POLARITY CONTROL; TIME OF FLIGHT SPECTROSCOPY; WURTZITE GALLIUM NITRIDE FILM;

SEMICONDUCTING FILMS;

EID: 0033741055 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.l202 Document Type: Article

Times cited : (30)

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