Quantitative comparison of surface morphology and reflection high-energy electron diffraction intensity for epitaxial growth on GaAs

Surface Science

Volumn 458, Issue 1, 2000, Pages 247-256

  Bell, G R ^a   Jones, T S ^a   Neave, J H ^a   Joyce, B A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; EPITAXIAL GROWTH; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS; SURFACE STRUCTURE; SURFACE TREATMENT; SURFACES;

HOMOEPITAXIAL GROWTH; LOW INDEX SINGLE CRYSTAL SURFACES; SPOT INTENSITY; STEP DENSITY; SURFACE RECONSTRUCTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033689077     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00453-2     Document Type: Article

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