Growth dynamics of GaAs, AlAs and (AI, Ga)As on GaAs (110) and (111)A substrates during molecular beam epitaxy

Journal of Materials Science: Materials in Electronics

Volumn 7, Issue 5, 1996, Pages 327-332

  Joyce, B A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; THIN FILMS;

GALLIUM ARSENIDE SUBSTRATES; GROWTH DYNAMICS; INTENSITY OSCILLATIONS; SEMICONDUCTING ALUMINUM ARSENIDE;

MOLECULAR BEAM EPITAXY;

EID: 0030263461     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

1. A. MADHUKAR Thin Solid Films 231 (1993) 8.
2. J. H. NEAVE, P. J. DOBSON, B. A. JOYCEand J. ZHANG, Appl. Phys. Lett. 47 (1985) 100.
3. J. L. SUDIJONO, M. D. JOHNSON, C. W. SNYDER, M. B. ELOWITZ and B. G. ORR, Phys. Rev. Lett. 69 (1992) 2811.
4. T. SHITARA, D. D. VVDENSKY, M. R. WILBY, J. ZHANG, J. H. NEAVE and B. A. JOYCE, Phys. Rev. B46 (1992) 6815.
5. P. N. FAWCETT, J. H. NEAVE, J. ZHANG and B. A. JOYCE, Surf. Sci. 296 (1993) 67.
6. Idem, J. Vac. Sci. Technol. A12 (1994) 1201.
7. M. R. FAHY, K. SATO and B. A. JOYCE, Appl. Phys. Lett. 64 (1994) 190.
8. K. SATO, M. R. FAHY and B. A. JOYCE, Surf. Sci. 315 (1994) 105.
9. Idem, Jpn. J. Appl. Phys. 33 (1994) 105.
10. J. H. NEAVE, B. A. JOYCE and P. J. DOBSON, Appl. Phys. A34 (1984) 179.
11. D. M. HOLMES, J. G. BELK, J. L. SUDIJONO, J. H. NEAVE, T. S. JONES and B. A. JOYCE, Surf. Sci. 341 (1995) 133.
12. D. M. HOLMES, J. G. BELK, J. L. SUDUONO, J. H. NEAVE, T. S. JONES and B. A. JOYCE, Appl. Phys. Lett. 67 (1995) 2848.
13. K. SATO, M. R. FAHY, I. KAMIYA, J. H. NEAVE and B. A. JOYCE, J. Cryst. Growth 150 (1995) 77.