Ga-adatom-induced As rearrangement during GaAs epitaxial growth: Self-surfactant effect

Physical Review B - Condensed Matter and Materials Physics

Volumn 57, Issue 11, 1998, Pages 6301-6304

  Shiraishi, Kenji ^a   Ito, Tomonori ^b  

^a NTT Basic Research Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001617024     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.57.6301     Document Type: Article

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