SCOPUS 정보 검색 플랫폼

Volumn 227-228, Issue , 2001, Pages 1000-1004

Growth rate effects on the size, composition and optical properties of InAs/GaAs quantum dots grown by molecular beam epitaxy

(7) Joyce, P B a Krzyzewski, T J a Bell, G R a Jones, T S a Malik, S a Childs, D a Murray, R a

a IMPERIAL COLLEGE LONDON (United Kingdom)

Author keywords

A1. Surface processes; A1. Surfaces; A3. Molecular beam epitaxy; B1. Arsenates; B2. Semiconducting III V materials

Indexed keywords

DENSITY (OPTICAL); DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; SURFACE PHENOMENA;

INDIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035398211 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)00967-8 Document Type: Conference Paper

Times cited : (40)

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