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Physical Review B - Condensed Matter and Materials Physics

Volumn 56, Issue 16, 1997, Pages 10289-10296

Surface atomic configurations due to dislocation activity in InAs/GaAs(110) heteroepitaxy

(3) Belk, J a Pashley, D a McConville, C a

a IMPERIAL COLLEGE LONDON (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042660590 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.56.10289 Document Type: Article

Times cited : (22)

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