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Volumn 55, Issue 3, 1997, Pages 1337-1340
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Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A
a a a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0000504608
PISSN: 10980121
EISSN: 1550235X
Source Type: Journal
DOI: 10.1103/PhysRevB.55.1337 Document Type: Article |
Times cited : (138)
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References (18)
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