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Volumn 227-228, Issue , 2001, Pages 466-470
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InGaN heterostructures grown by molecular beam epitaxy: From growth mechanism to optical properties
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Author keywords
A1. Growth model; A1. Low dimensional structures; A1. Optical properties; A3. Molecular beam epitaxy; B1. Nitrides
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Indexed keywords
COMPOSITION EFFECTS;
GALLIUM NITRIDE;
MOLECULAR BEAM EPITAXY;
PHASE TRANSITIONS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM DOTS;
SEMICONDUCTOR QUANTUM WELLS;
SURFACE ACTIVE AGENTS;
STRANSKI-KRASTANOV GROWTH MODE TRANSITIONS;
HETEROJUNCTIONS;
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EID: 0035398654
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)00744-8 Document Type: Conference Paper |
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Times cited : (16)
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References (13)
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