Studies of group-III-nitride growth on silicon

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 465-469

  Blant, A V ^a   Cheng, T S ^a   Foxon, C T ^a   Bussey, J C ^a   Novikov, S V ^a   Tret'yakov, V V ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; NITRIDES; PLASMA APPLICATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMA ENHANCED MOLECULAR BEAM EPITAXY;

SEMICONDUCTING FILMS;

EID: 0030676648     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)