-
1
-
-
0004607079
-
Hydrolyzation oxidation of a1gaas-Alas-gaas quantum well heterostructures and superlattices
-
J.M. Dallesasse, N. Holonyak, Jr., A.R. Sugg, and T.A. Richard, "Hydrolyzation oxidation of A1GaAs-AlAs-GaAs quantum well heterostructures and superlattices," Appl. Phys. Lett. 57, pp. 2844-2846, 1990.
-
(1990)
Appl. Phys. Lett
, vol.57
, pp. 2844-2846
-
-
Dallesasse, J.M.1
Holonyak, N.2
Sugg, A.R.3
Richard, T.A.4
-
2
-
-
36449001178
-
Native-oxide stripe-geometry algaas-gaas quantum well heterostructure lasers
-
J.M. Dallesasse and N. Holonyak, Jr., "Native-oxide stripe-geometry AlGaAs-GaAs quantum well heterostructure lasers," Appl. Phys. Lett. 58, pp. 394-396, 1991.
-
(1991)
Appl. Phys. Lett
, vol.58
, pp. 394-396
-
-
Dallesasse, J.M.1
Holonyak, N.2
-
3
-
-
0342441761
-
Native oxide defined low loss a1gaas-gaas planar waveguide bends
-
S.A. Caracci, M.R. Krames, N. Holonyak, Jr., C.M. Herzinger, A.C. Crook, T.A. DeTemple, and P.-A. Besse, "Native oxide defined low loss A1GaAs-GaAs planar waveguide bends," Appl. Phys. Lett. 63, pp. 2265-2267, 1993.
-
(1993)
Appl. Phys. Lett
, vol.63
, pp. 2265-2267
-
-
Caracci, S.A.1
Krames, M.R.2
Holonyak, N.3
Herzinger, C.M.4
Crook, A.C.5
DeTemple, T.A.6
Besse, P.-A.7
-
4
-
-
36449007697
-
Postfabrication native-oxide improvement of the reliability of visible spectrum a1gaas-in(a1ga)p p-n heterostructure diodes
-
T.A. Richard, N. Holonyak, Jr., F.A. Kish, M.R. Keever, and C. Lei, "Postfabrication native-oxide improvement of the reliability of visible spectrum A1GaAs-In(A1Ga)P p-n heterostructure diodes," Appl. Phys. Lett. 66, pp. 2972-2974, 1995.
-
(1995)
Appl. Phys. Lett
, vol.66
, pp. 2972-2974
-
-
Richard, T.A.1
Holonyak, N.2
Kish, F.A.3
Keever, M.R.4
Lei, C.5
-
5
-
-
84867972432
-
Algaas-gaas metal-oxide semiconductor field effect transistors formed by lateral water vapor oxidation of alas
-
E.I. Chen, N. Holonyak, Jr., and S.A. Maranowski, "AlGaAs-GaAs metal-oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAs," Appl. Phys. Lett. 66, pp. 2688-2690, 1995.
-
(1995)
Appl. Phys. Lett
, vol.66
, pp. 2688-2690
-
-
Chen, E.I.1
Holonyak, N.2
Maranowski, S.A.3
-
6
-
-
36749121824
-
Self-terminating thermal oxidation of alas epilayers grown on gaas by molecular beam epitaxy
-
W.T. Tsang, "Self-terminating thermal oxidation of AlAs epilayers grown on GaAs by molecular beam epitaxy," Appl. Phys. Lett. 33, pp. 426-429, 1978.
-
(1978)
Appl. Phys. Lett
, vol.33
, pp. 426-429
-
-
Tsang, W.T.1
-
7
-
-
0010048057
-
Multidielectrics for gaas mis devices using composition graded alxgal-xas and oxidized alas
-
W.T. Tsang, M. Olmstead, and R.P.H. Chang, "Multidielectrics for GaAs MIS devices using composition graded AlxGal-xAs and oxidized AlAs," Appl. Phys. Lett. 34, pp. 408-410, 1979.
-
(1979)
Appl. Phys. Lett
, vol.34
, pp. 408-410
-
-
Tsang, W.T.1
Olmstead, M.2
Chang, R.P.H.3
-
8
-
-
21544477878
-
Native oxide stabilization of alas-gaas heterostructures
-
A.R. Sugg, N. Holonyak, Jr., J.E. Baker, F.A. Kish, and J.M. Dallesasse, "Native oxide stabilization of AlAs-GaAs heterostructures," Appl. Phys. Lett. 58, pp. 1199-1201, 1991.
-
(1991)
Appl. Phys. Lett
, vol.58
, pp. 1199-1201
-
-
Sugg, A.R.1
Holonyak, N.2
Baker, J.E.3
Kish, F.A.4
Dallesasse, J.M.5
-
9
-
-
0028764159
-
Native-oxide defined buried ring contact for low threshold vertical-cavity lasers
-
D.L. Huffaker, D.G. Deppe, K. Kumar, and T.J. Rogers, "Native-oxide defined buried ring contact for low threshold vertical-cavity lasers," Appl. Phys. Lett. 65, 97-99, 1994.
-
(1994)
Appl. Phys. Lett
, vol.65
, pp. 97-99
-
-
Huffaker, D.L.1
Deppe, D.G.2
Kumar, K.3
Rogers, T.J.4
-
10
-
-
0028549879
-
Low-threshold half-wave vertical-cavity lasers
-
D.L. Huffaker, J. Shin, and D.G. Deppe, "Low-threshold half-wave vertical-cavity lasers," Electron. Lett. 30, 1946-1947, 1994.
-
(1946)
Electron. Lett
, vol.30
, pp. 1994
-
-
Huffaker, D.L.1
Shin, J.2
Deppe, D.G.3
-
11
-
-
0028550787
-
Low threshold voltage vertical-cavity lasers fabricated by selective oxidation
-
K.D. Choquette, R.P. Schneider, Jr., K.L. Lear, and K.M. Geib, "Low threshold voltage vertical-cavity lasers fabricated by selective oxidation," Electron. Lett. 30, pp. 2043-2044, 1994.
-
(1994)
Electron. Lett
, vol.30
, pp. 2043-2044
-
-
Choquette, K.D.1
Schneider, R.P.2
Lear, K.L.3
Geib, K.M.4
-
12
-
-
0029632464
-
Selectively oxidized vertical-cavity surface-emitting lasers with 50% power conversion efficiency
-
K.L. Lear, K.D. Choquette, R.P. Schneider, Jr., S.P. Kilcoyne, and K.M. Geib, "Selectively Oxidized Vertical-Cavity Surface-Emitting Lasers With 50% Power Conversion Efficiency," Electron. Lett. 31, 208-209, 1995.
-
(1995)
Electron. Lett
, vol.31
, pp. 208-209
-
-
Lear, K.L.1
Choquette, K.D.2
Schneider, R.P.3
Kilcoyne, S.P.4
Geib, K.M.5
-
13
-
-
0029304501
-
Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation
-
G. M. Yang, M. H. MacDougal, and P. D. Dapkus, "Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation," Electron. Lett. 31, pp. 886-888, 1995.
-
(1995)
Electron. Lett
, vol.31
, pp. 886-888
-
-
Yang, G.M.1
MacDougal, M.H.2
Dapkus, P.D.3
-
14
-
-
0029273231
-
Record low-threshold index-guided ingaas/gaa1as vertical-cavity surface-emitting laser with a native oxide confinement structure
-
Y. Hayashi, T. Mukaihara, N. Hatori, N. Ohnoki, A. Matsutani, F. Koyama, and K. Iga, " Record low-threshold index-guided InGaAs/GaA1As vertical-cavity surface-emitting laser with a native oxide confinement structure," Electron. Lett. 31, pp. 560-562, 1995.
-
(1995)
Electron. Lett
, vol.31
, pp. 560-562
-
-
Hayashi, Y.1
Mukaihara, T.2
Hatori, N.3
Ohnoki, N.4
Matsutani, A.5
Koyama, F.6
Iga, K.7
-
15
-
-
0031079120
-
57 % wallplug efficiency oxide-confined 850 nm wavelength GaAs VCSELs
-
R. Jager, M. Grabherr, C. Jung, R. Michalzik, G. Reiner, B. Wiegl, and K. Ebeling, "57 % wallplug efficiency oxide-confined 850 nm wavelength GaAs VCSELs," Electron. Lett. 33, pp. 330-331, 1997.
-
(1997)
Electron. Lett
, vol.33
, pp. 330-331
-
-
Jager, R.1
Grabherr, M.2
Jung, C.3
Michalzik, R.4
Reiner, G.5
Wiegl, B.6
Ebeling, K.7
-
16
-
-
0031075990
-
Low dit, thermodynamically stable ga2o3-gaas interfaces: Fabrication, characerization, and modeling
-
M. Passlack, M. Hong, J.P. Mannaerts, R.L. Opila, S.N.G. Chu, N. Moriya, F. Ren, and J.R. Kwo, "Low Dit, thermodynamically stable Ga2O3-GaAs interfaces: fabrication, characerization, and modeling," IEEE Trans. Electron. Dev. 44, pp. 214-225, 1997.
-
(1997)
IEEE Trans. Electron. Dev
, vol.44
, pp. 214-225
-
-
Passlack, M.1
Hong, M.2
Mannaerts, J.P.3
Opila, R.L.4
Chu, S.N.G.5
Moriya, N.6
Ren, F.7
Kwo, J.R.8
-
17
-
-
0031126153
-
A ga2o3 passivation technique compatible with gaas device processing
-
M. Hong, M. Passlack, J.P. Mannaerts, T.D. Harris, M.L. Schnoes, R.L. Opila, and H.W. Krautter, "A Ga2O3 passivation technique compatible with GaAs device processing," Solid-State Electron. 41, pp. 643-646, 1997.
-
(1997)
Solid-State Electron
, vol.41
, pp. 643-646
-
-
Hong, M.1
Passlack, M.2
Mannaerts, J.P.3
Harris, T.D.4
Schnoes, M.L.5
Opila, R.L.6
Krautter, H.W.7
-
18
-
-
0009597752
-
Photoluminescence study of hydrogenated aluminum oxide-semiconductor interface
-
S.S. Shi, E.L. Hu, J.-P. Zhang, Y.-I. Chang, P. Parikh, and U. Mishra, "Photoluminescence study of hydrogenated aluminum oxide-semiconductor interface," Appl. Phys. Lett. 70, pp. 1293-1295, 1997.
-
(1997)
Appl. Phys. Lett
, vol.70
, pp. 1293-1295
-
-
Shi, S.S.1
Hu, E.L.2
Zhang, J.-P.3
Chang, Y.-I.4
Parikh, P.5
Mishra, U.6
-
19
-
-
0029702964
-
First demonstration of gaas on insulator (goi) technology
-
P. Parikh, P. Chavarkar, and U. Mishra, "First demonstration of GaAs on insulator (GOI) technology," 54th Annual Device Research Conference Digest, p. 202, 1996.
-
(1996)
54th Annual Device Research Conference Digest
, pp. 202
-
-
Parikh, P.1
Chavarkar, P.2
Mishra, U.3
-
20
-
-
0007614726
-
An inalas/ingaas metal-oxide-semiconductor field effect transistor using the native oxide of inalas as a gate insulation layer
-
P.A. Grudowski, R.V. Chelakara, and R.D. Dupuis, "An InAlAs/InGaAs metal-oxide-semiconductor field effect transistor using the native oxide of InAlAs as a gate insulation layer," Appl. Phys. Lett. 69, pp. 388-390, 1996.
-
(1996)
Appl. Phys. Lett
, vol.69
, pp. 388-390
-
-
Grudowski, P.A.1
Chelakara, R.V.2
Dupuis, R.D.3
-
21
-
-
85037546762
-
-
As told to one of the authors, DGD, by Prof Holonyak
-
As told to one of the authors, DGD, by Prof. Holonyak.
-
-
-
-
22
-
-
0000611936
-
Stability of alas in alxgal-xas-Alas-gaas quantum well heterostructures
-
J.M. Dallesasse, P. Gavrilovic, N. Holonyak, Jr., R.W. Kaliski, D.W. Nam, E.J. Vesely, and R.D. Burnahm, "Stability of AlAs in AlxGal-xAs-AlAs-GaAs quantum well heterostructures," Appl. Phys. Lett. 56, pp. 2436-2438, 1990.
-
(1990)
Appl. Phys. Lett
, vol.56
, pp. 2436-2438
-
-
Dallesasse, J.M.1
Gavrilovic, P.2
Holonyak, N.3
Kaliski, R.W.4
Nam, D.W.5
Vesely, E.J.6
Burnahm, R.D.7
-
23
-
-
0000927668
-
Environmental degradation of alxgalxas-gaas quantum well heterostructures
-
J.M. Dallesasse, N. El-Zein, N. Holonyak, Jr., K.C. Hsieh, R.D. Burnham, and R.D. Dupuis, "Environmental degradation of AlxGalxAs-GaAs quantum well heterostructures," J. Appl. Phys. 68, pp. 2235-2238, 1990.
-
(1990)
J. Appl. Phys
, vol.68
, pp. 2235-2238
-
-
Dallesasse, J.M.1
El-Zein, N.2
Holonyak, N.3
Hsieh, K.C.4
Burnham, R.D.5
Dupuis, R.D.6
-
24
-
-
0000573767
-
Wet oxidation of alxgal-xas: Temporal evolution of composition and microstructur and the implications for metal-insulator-semiconductor applications
-
C.I.H. Ashby, J.P. Sullivan, P.P. Newcomer, N.A. Missert, H.Q. Hou, B.E. Hammons, M.J. Hafich, and A.G. Baca, "Wet oxidation of AlxGal-xAs: temporal evolution of composition and microstructur and the implications for metal-insulator-semiconductor applications," Appl. Phys. Lett. 70, pp. 2443-2445, 1997.
-
(1997)
Appl. Phys. Lett
, vol.70
, pp. 2443-2445
-
-
Ashby, C.I.H.1
Sullivan, J.P.2
Newcomer, P.P.3
Missert, N.A.4
Hou, H.Q.5
Hammons, B.E.6
Hafich, M.J.7
Baca, A.G.8
-
25
-
-
0031153123
-
Advances in selective wet oxidation of a1gaas alloys
-
K.D. Choquette, K.M. Geib, C.I.H. Ashby, R.D. Tweston, O. Blum, H.Q. Hou, D.M. Follstaedt, B.E. Hammons, D. Mathes, and R. Hull, "Advances in selective wet oxidation of A1GaAs alloys," IEEE J. Quant. Electron. 3, pp. 916-926, 1997.
-
(1997)
IEEE J. Quant. Electron
, vol.3
, pp. 916-926
-
-
Choquette, K.D.1
Geib, K.M.2
Ashby, C.I.H.3
Tweston, R.D.4
Blum, O.5
Hou, H.Q.6
Follstaedt, D.M.7
Hammons, B.E.8
Mathes, D.9
Hull, R.10
-
26
-
-
0031373538
-
Fabrication issues of oxide-confined vcsels
-
K.M. Geib, K.D. Choquette, H.Q. Hou, and B.E. Hammons, "Fabrication issues of oxide-confined VCSELs," Proceedings of the SPIE Vertical-Cavity Surface-Emitting Lasers, Vol. 3003, pp. 69-74, 1997.
-
(1997)
Proceedings of the SPIE Vertical-Cavity Surface-Emitting Lasers
, vol.3003
, pp. 69-74
-
-
Geib, K.M.1
Choquette, K.D.2
Hou, H.Q.3
Hammons, B.E.4
-
27
-
-
0000150498
-
Wet thermal oxidation of alxgal-xas compounds
-
R.S. Burton and T.E. Schlesinger, "Wet thermal oxidation of AlxGal-xAs compounds," J. Appl. Phys. 76, pp. 5503-5507, 1994.
-
(1994)
J. Appl. Phys
, vol.76
, pp. 5503-5507
-
-
Burton, R.S.1
Schlesinger, T.E.2
-
28
-
-
0026960815
-
Properties and use of in0.5(alxgal-x)0.5p and alxgal-xas native oxides in heterostructure lasers
-
F.A. Kish, S.J. Caracci, N. Holonyak, Jr., K.C. Hsieh, J.E. Baker, S.A. Maranowski, A.R. Sugg, J.M. Dallesasse, R.M. Fletcher, C.P. Kuo, T.D. Osentowski, and M.G. Craford, "Properties and use of In0.5(AlxGal-x)0.5P and AlxGal-xAs native oxides in heterostructure lasers," J. Electron. Mat. 21, pp. 1133-1139, 1992.
-
(1992)
J. Electron. Mat
, vol.21
, pp. 1133-1139
-
-
Kish, F.A.1
Caracci, S.J.2
Holonyak, N.3
Hsieh, K.C.4
Baker, J.E.5
Maranowski, S.A.6
Sugg, A.R.7
Dallesasse, J.M.8
Fletcher, R.M.9
Kuo, C.P.10
Osentowski, T.D.11
Craford, M.G.12
-
29
-
-
0030127779
-
Kinetics of thermal oxidation of alas in water vapor
-
M. Ochiai, G.E. Giudice, H. Temkin, J.W. Scott, and T.M. Cockerill, "Kinetics of thermal oxidation of AlAs in water vapor," Appl. Phys. Lett. 68, pp. 1898-1900, 1996.
-
(1996)
Appl. Phys. Lett
, vol.68
, pp. 1898-1900
-
-
Ochiai, M.1
Giudice, G.E.2
Temkin, H.3
Scott, J.W.4
Cockerill, T.M.5
-
30
-
-
0000716761
-
Wet oxidation of alas grown by molecular beam epitaxy
-
Y-S. Lee, Y-H. Lee, and J-H. Lee, "Wet oxidation of AlAs grown by molecular beam epitaxy," Appl. Phys. Lett. 65, pp. 2717-2719, 1994.
-
(1994)
Appl. Phys. Lett
, vol.65
, pp. 2717-2719
-
-
Lee, Y.-S.1
Lee, Y.-H.2
Lee, J.-H.3
-
31
-
-
0000919383
-
Recombination in gaas at the alas oxide-gaas interface
-
J.A. Kash, B. Pezeshki, F. Agahi, and N.A. Bojarczuk, "Recombination in GaAs at the AlAs oxide-GaAs interface," Appl. Phys. Lett. 67, pp. 2022-2024, 1995.
-
(1995)
Appl. Phys. Lett
, vol.67
, pp. 2022-2024
-
-
Kash, J.A.1
Pezeshki, B.2
Agahi, F.3
Bojarczuk, N.A.4
-
32
-
-
0031373537
-
Effects of steam oxidation on a single in0,2ga0,8as quantum well in a half-wave cavity
-
L.A. Graham, D.L. Huffaker, T.-H. Oh, and D.G. Deppe, "Effects of steam oxidation on a single In0,2Ga0,8As quantum well in a half-wave cavity," Proceedings of the SPIE Vertical-Cavity Surface-Emitting Lasers, Vol. 3003, pp. 63-68, 1997.
-
(1997)
Proceedings of the SPIE Vertical-Cavity Surface-Emitting Lasers
, vol.3003
, pp. 63-68
-
-
Graham, L.A.1
Huffaker, D.L.2
Oh, T.-H.3
Deppe, D.G.4
-
33
-
-
0001529006
-
Microstructure of algaas-oxide herolayers formed by wet oxidation
-
S. Guha, F. Agahi, B. Pezeshki, J.A. Kash, D.W. Kisker, and N.A. Bojarczuk, "Microstructure of AlGaAs-oxide herolayers formed by wet oxidation," Appl. Phys. Lett. 68, pp. 906-908, 1996.
-
(1996)
Appl. Phys. Lett
, vol.68
, pp. 906-908
-
-
Guha, S.1
Agahi, F.2
Pezeshki, B.3
Kash, J.A.4
Kisker, D.W.5
Bojarczuk, N.A.6
-
34
-
-
0031372777
-
Microstructure and interface properties of laterally oxidized alxga 1-xas
-
R.D. Tweston, D.M. Follstaedt, K.D. Choquette, "Microstructure and interface properties of laterally oxidized AlxGa 1-xAs," Proceedings of the SPIE Vertical-Cavity Surface-Emitting Lasers, Vol. 3003, pp. 56-62, 1997.
-
(1997)
Proceedings of the SPIE Vertical-Cavity Surface-Emitting Lasers
, vol.3003
, pp. 56-62
-
-
Tweston, R.D.1
Follstaedt, D.M.2
Choquette, K.D.3
-
35
-
-
0000377928
-
Microstructure of laterally oxidized a1gaas layers in vertical cavity lasers
-
R.D. Tweston, D.M. Follstaedt, K.D. Choquette, and R.P. Schneider, Jr., "Microstructure of laterally oxidized A1GaAs layers in vertical cavity lasers," Appl. Phys. Lett. 69, pp. 19-21, 1996.
-
(1996)
Appl. Phys. Lett
, vol.69
, pp. 19-21
-
-
Tweston, R.D.1
Follstaedt, D.M.2
Choquette, K.D.3
Schneider, R.P.4
-
36
-
-
0347229462
-
Structure of III-v oxides
-
Z. Liliental-Weber, M. Li, G.S. Li, C. Chang-Hasnain, and E.R. Weber, "Structure of III-V oxides," Proceedings of Microscopy and Microanalysis, pp. 942-943, 1996.
-
(1996)
Proceedings of Microscopy and Microanalysis
, pp. 942-943
-
-
Liliental-Weber, Z.1
Li, M.2
Li, G.S.3
Chang-Hasnain, C.4
Weber, E.R.5
-
37
-
-
33750818359
-
Al-based thermal oxides in vertical cavity surface emitting lasers
-
Z. Liliental-Weber, S. Ruvimov, W. Swider, J. Washburn, M. Li, G.S. Li, C. Chang-Hasnain, and E.R. Weber, "Al-based thermal oxides in vertical cavity surface emitting lasers," Proceedings of the SPIE Optoelectronics Integrated Circuits, Vol. 3006, 1997.
-
(1997)
Proceedings of the SPIE Optoelectronics Integrated Circuits
, vol.3006
-
-
Liliental-Weber, Z.1
Ruvimov, S.2
Swider, W.3
Washburn, J.4
Li, M.5
Li, G.S.6
Chang-Hasnain, C.7
Weber, E.R.8
-
38
-
-
0001520150
-
Selective oxidation of buried a1gaas versus alas layers
-
K.D. Choquette, K.M. Geib, H.C. Chui, B.E. Hammons, H.Q. Hou, T.J. Drummond, and R. Hull, "Selective oxidation of buried A1GaAs versus AlAs layers," Appl. Phys. Lett. 69, pp. 1385-1387, 1996.
-
(1996)
Appl. Phys. Lett
, vol.69
, pp. 1385-1387
-
-
Choquette, K.D.1
Geib, K.M.2
Chui, H.C.3
Hammons, B.E.4
Hou, H.Q.5
Drummond, T.J.6
Hull, R.7
-
39
-
-
0011912232
-
Thermal oxidation of gaas
-
S.P. Murarka, "Thermal oxidation of GaAs," Appl. Phys. Lett. 26, pp. 180-181, 1975.
-
(1975)
Appl. Phys. Lett
, vol.26
, pp. 180-181
-
-
Murarka, S.P.1
-
40
-
-
0005300574
-
Sealing alas against oxidative decomposition and its use in device fabrication
-
D.L. Huffaker, D.G. Deppe, C. Lei, and L.A. Hodge, "Sealing AlAs against oxidative decomposition and its use in device fabrication," Appl. Phys. Lett. 68, pp. 1948-1949, 1996.
-
(1996)
Appl. Phys. Lett
, vol.68
, pp. 1948-1949
-
-
Huffaker, D.L.1
Deppe, D.G.2
Lei, C.3
Hodge, L.A.4
-
42
-
-
0031556434
-
Sealing of alas against wet oxidation and its use in the fabrication of vertical-cavity surface-emitting lasers
-
D.H. Lim, G.M. Yang, J.-H. Kim, K.Y. Lim, and H.J. Lee, "Sealing of AlAs against wet oxidation and its use in the fabrication of vertical-cavity surface-emitting lasers," Appl. Phys. Lett. 71, pp. 1915-1917, 1997.
-
(1997)
Appl. Phys. Lett
, vol.71
, pp. 1915-1917
-
-
Lim, D.H.1
Yang, G.M.2
Kim, J.-H.3
Lim, K.Y.4
Lee, H.J.5
-
43
-
-
0030576246
-
Oxide-confined vertical-cavity laser with additional etched void confinement
-
H. Deng and D.G. Deppe, "Oxide-confined vertical-cavity laser with additional etched void confinement," Electron. Lett. 32, pp. 900-901, 1996.
-
(1996)
Electron. Lett
, vol.32
, pp. 900-901
-
-
Deng, H.1
Deppe, D.G.2
-
44
-
-
0030261681
-
Steam oxidation of gaas
-
T.-H. Oh, D.L. Huffaker, L.A. Graham, H. Deng, and D.G. Deppe, "Steam oxidation of GaAs," Electron. Lett. 32, pp. 2024-2026, 1996.
-
(1996)
Electron. Lett
, vol.32
, pp. 2024-2026
-
-
Oh, T.-H.1
Huffaker, D.L.2
Graham, L.A.3
Deng, H.4
Deppe, D.G.5
-
45
-
-
0005143880
-
Wet thermal oxidation of a1assb lattice matched to inp for optoelectronic applications
-
O. Blum, K.M. Geib, M.J. Hafich, J.F. Klem, and C.I.H. Ashby, "Wet thermal oxidation of A1AsSb lattice matched to InP for optoelectronic applications," Appl. Phys. Lett. 68, pp. 3129-3130, 1996.
-
(1996)
Appl. Phys. Lett
, vol.68
, pp. 3129-3130
-
-
Blum, O.1
Geib, K.M.2
Hafich, M.J.3
Klem, J.F.4
Ashby, C.I.H.5
-
46
-
-
0031554338
-
Wet thermal oxidation of a1assb against as/sb ratio
-
O. Blum, M.J. Hafich, J.F. Klem, K. Baucom, and A. Allerman, "Wet thermal oxidation of A1AsSb against As/Sb ratio," Electron. Lett. 33, pp. 1097-1099, 1997.
-
(1997)
Electron. Lett
, vol.33
, pp. 1097-1099
-
-
Blum, O.1
Hafich, M.J.2
Klem, J.F.3
Baucom, K.4
Allerman, A.5
-
47
-
-
0028423060
-
Buried-oxide ridge-waveguide inalas-inp-ingaasp (1-1.3 p.m) quantum well heterostructure laser diodes
-
M.R. Krames, N. Holonyak, Jr., J. Epler, and H.P. Schweizer, "Buried-oxide ridge-waveguide InAlAs-InP-InGaAsP (1-1.3 p.m) quantum well heterostructure laser diodes," Appl. Phys. Lett. 64, pp. 2821-2823, 1994.
-
(1994)
Appl. Phys. Lett
, vol.64
, pp. 2821-2823
-
-
Krames, M.R.1
Holonyak, N.2
Epler, J.3
Schweizer, H.P.4
-
48
-
-
0042019439
-
Native-oxide stripe-geometry in0.5(alxga 1-x)0.5pin0.5ga0.5p heterostructure laser diodes
-
F.A. Kish, S.J. Caracci, N. Holonyak, Jr., J.M. Dallesasse, A.R. Sugg, R.M. Fletcher, C.P. Kuo, T.D. Osentowski, and M.G. Craford, "Native-oxide stripe-geometry In0.5(AlxGa 1-x)0.5PIn0.5Ga0.5P heterostructure laser diodes," Appl. Phys. Lett. 59, pp. 354-356, 1991.
-
(1991)
Appl. Phys. Lett
, vol.59
, pp. 354-356
-
-
Kish, F.A.1
Caracci, S.J.2
Holonyak, N.3
Dallesasse, J.M.4
Sugg, A.R.5
Fletcher, R.M.6
Kuo, C.P.7
Osentowski, T.D.8
Craford, M.G.9
-
49
-
-
0030704977
-
Luminescence characteristics of ina1p-ingap heterostructures having native-oxide windows
-
M.R. Islam, R.D. Dupuis, A.L. Holmes, A.P. Curtis, N.F. Gardner, G.E. Stillman, J.E. Baker, and R. Hull, "Luminescence characteristics of InA1P-InGaP heterostructures having native-oxide windows," J. Crystal Growth 170, pp. 413-417, 1997.
-
(1997)
J. Crystal Growth
, vol.170
, pp. 413-417
-
-
Islam, M.R.1
Dupuis, R.D.2
Holmes, A.L.3
Curtis, A.P.4
Gardner, N.F.5
Stillman, G.E.6
Baker, J.E.7
Hull, R.8
-
50
-
-
21544443250
-
Native oxide top-And bottom-confined narrow stripe p-n a1gaas-gaas-ingaas quantum well heterostructure laser
-
S.A. Maranowski, A.R. Sugg, E.I. Chen, and N. Holonyak, Jr., "Native oxide top-And bottom-confined narrow stripe p-n A1GaAs-GaAs-InGaAs quantum well heterostructure laser," Appl. Phys. Lett. 63, pp. 1660-1662, 1993.
-
(1993)
Appl. Phys. Lett
, vol.63
, pp. 1660-1662
-
-
Maranowski, S.A.1
Sugg, A.R.2
Chen, E.I.3
Holonyak, N.4
-
51
-
-
5244379788
-
Planar native-oxide a1gaas-gaas quantum well heterostructure ring laser diodes
-
F.A. Kish, S.J. Caracci, S.A. Maranowski, and N. Holonyak, Jr., "Planar native-oxide A1GaAs-GaAs quantum well heterostructure ring laser diodes," Appl. Phys. Lett. 60, pp. 1582-1584, 1992.
-
(1992)
Appl. Phys. Lett
, vol.60
, pp. 1582-1584
-
-
Kish, F.A.1
Caracci, S.J.2
Maranowski, S.A.3
Holonyak, N.4
-
52
-
-
31644434891
-
Planar single-facet teardrop-shaped algaas-gaas quantum well heterostructure laser
-
S.J. Caracci, M.R. Krames, M.J. Ries, and N. Holonyak, Jr., "Planar single-facet teardrop-shaped AlGaAs-GaAs quantum well heterostructure laser," Appl. Phys. Lett. 63, pp. 1818-1820, 1993.
-
(1993)
Appl. Phys. Lett
, vol.63
, pp. 1818-1820
-
-
Caracci, S.J.1
Krames, M.R.2
Ries, M.J.3
Holonyak, N.4
-
53
-
-
0346457993
-
Photopumped room-temperature continuous operation of native-oxide-embedded a1gaas-gaas-ingaas quantum well heterostructure lasers
-
A.R. Sugg, E.I. Chen, T.A. Richard, N. Holonyak, Jr., and K.C. Hsieh, "Photopumped room-temperature continuous operation of native-oxide-embedded A1GaAs-GaAs-InGaAs quantum well heterostructure lasers," J. Appl. Phys. 74, pp. 797-801, 1993.
-
(1993)
J. Appl. Phys
, vol.74
, pp. 797-801
-
-
Sugg, A.R.1
Chen, E.I.2
Richard, T.A.3
Holonyak, N.4
Hsieh, K.C.5
-
54
-
-
21544460797
-
Native-oxide-embedded algaas-gaas-ingaas quantum well heterostructure lasers
-
A.R. Sugg, E.I. Chen, T.A. Richard, N. Holonyak, Jr., and K.C. Hsieh, " Native-oxide-embedded AlGaAs-GaAs-InGaAs quantum well heterostructure lasers," Appl. Phys. Lett. 62, pp. 1259-1261, 1993.
-
(1993)
Appl. Phys. Lett
, vol.62
, pp. 1259-1261
-
-
Sugg, A.R.1
Chen, E.I.2
Richard, T.A.3
Holonyak, N.4
Hsieh, K.C.5
-
55
-
-
0024069478
-
Surface emitting semiconductor lasers
-
and references therein
-
K. Iga, F. Koyama, and S. Kinoshita, "Surface emitting semiconductor lasers," IEEE J. Quant. Electron. 24, pp. 1845-1855, 1988, and references therein.
-
(1988)
IEEE J. Quant. Electron
, vol.24
, pp. 1845-1855
-
-
Iga, K.1
Koyama, F.2
Kinoshita, S.3
-
56
-
-
36549100758
-
Visible, room-temperature, surface-emitting laser using an epitaxial fabry-perot resonator with a1gaas/a1as quarter-wave high reflectors and a1gaas/gaas multiple quantum wells
-
P.L. Gourley and T.J. Drummond, "Visible, room-temperature, surface-emitting laser using an epitaxial Fabry-Perot resonator with A1GaAs/A1As quarter-wave high reflectors and A1GaAs/GaAs multiple quantum wells," Appl. Phys. Lett. 50, pp. 1225-1227, 1987.
-
(1987)
Appl. Phys. Lett
, vol.50
, pp. 1225-1227
-
-
Gourley, P.L.1
Drummond, T.J.2
-
57
-
-
0026172831
-
Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization
-
J.L. Jewell, J.P. Harbison, A. Scherer, Y.H. Lee, and L.T. Florez, "Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization," IEEE J. Quant. Electron. 27, pp. 1332-1346, 1991.
-
(1991)
IEEE J. Quant. Electron
, vol.27
, pp. 1332-1346
-
-
Jewell, J.L.1
Harbison, J.P.2
Scherer, A.3
Lee, Y.H.4
Florez, L.T.5
-
58
-
-
0031165259
-
Eigenmode confinement in the dielectrically apertured fabry-perot microcavity
-
June
-
D.G. Deppe, T.-H. Oh, and D.L. Huffaker, "Eigenmode confinement in the dielectrically apertured Fabry-Perot microcavity," IEEE Phot. Tech. Lett. 9, 713-715 (June, 1997).
-
(1997)
IEEE Phot. Tech. Lett
, vol.9
, pp. 713-715
-
-
Deppe, D.G.1
Oh, T.-H.2
Huffaker, D.L.3
-
59
-
-
0030165781
-
Index guiding effects in implant and oxide confined vertical-cavity surface-emitting lasers
-
K.L. Lear, R.P. Schneider, Jr., K.D. Choquette, and S.P. Kilcoyne, "Index guiding effects in implant and oxide confined vertical-cavity surface-emitting lasers," IEEE Phot. Tech. Lett. 8, pp. 740-742, 1996.
-
(1996)
IEEE Phot. Tech. Lett
, vol.8
, pp. 740-742
-
-
Lear, K.L.1
Schneider, R.P.2
Choquette, K.D.3
Kilcoyne, S.P.4
-
61
-
-
0028396201
-
Low-threshold continuous-wave surface-emitting lasers with etched-void confinement
-
C.C. Hansing, H. Deng, D.L. Huffaker, D.G. Deppe, B.G. Streetman, and J. Sarathy, "Low-threshold continuous-wave surface-emitting lasers with etched-void confinement," IEEE Phot. Tech. Lett. 6, pp. 320-322, 1994.
-
(1994)
IEEE Phot. Tech. Lett
, vol.6
, pp. 320-322
-
-
Hansing, C.C.1
Deng, H.2
Huffaker, D.L.3
Deppe, D.G.4
Streetman, B.G.5
Sarathy, J.6
-
63
-
-
0031188129
-
Self-consistent eigenmode analysis of the dielectrically apertured fabry-perot microcavity
-
D.G. Deppe and Q. Deng, "Self-consistent eigenmode analysis of the dielectrically apertured Fabry-Perot microcavity," Appl. Phys. Lett. 71, pp. 160-162, 1997.
-
(1997)
Appl. Phys. Lett
, vol.71
, pp. 160-162
-
-
Deppe, D.G.1
Deng, Q.2
-
64
-
-
0030289420
-
Size effects in small oxide confined vertical-cavity surface-emitting lasers
-
T.-H. Oh, D.L. Huffaker, and D.G. Deppe, "Size effects in small oxide confined vertical-cavity surface-emitting lasers," Appl. Phys. Lett. 69, pp. 3152-3154, 1996.
-
(1996)
Appl. Phys. Lett
, vol.69
, pp. 3152-3154
-
-
Oh, T.-H.1
Huffaker, D.L.2
Deppe, D.G.3
-
65
-
-
0029632464
-
Selective oxidized vertical-cavity surface emitting laers with 50% power conversion effiency
-
K.L. Lear, K.D. Choquette, R.P. Scheider, Jr., S.P. Kilcoyne, and K.M. Geib, "Selective oxidized vertical-cavity surface emitting laers with 50% power conversion effiency," Electron. Lett. 31, pp. 208-209, 1995.
-
(1995)
Electron. Lett
, vol.31
, pp. 208-209
-
-
Lear, K.L.1
Choquette, K.D.2
Scheider, R.P.3
Kilcoyne, S.P.4
Geib, K.M.5
-
66
-
-
0030213607
-
Sub-401.1a continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors
-
D.L. Huffaker, L.A. Graham, H. Deng, and D.G. Deppe, "Sub-401.1A continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors," IEEE Phot. Tech. Lett. 8, pp. 974-976, 1996.
-
(1996)
IEEE Phot. Tech. Lett
, vol.8
, pp. 974-976
-
-
Huffaker, D.L.1
Graham, L.A.2
Deng, H.3
Deppe, D.G.4
-
67
-
-
0030106607
-
High efficiency selectively oxidized mbe grown vertical-cavity surface-emitting lasers
-
B. Weigl, M. Grabherr, G. Reiner, and K.J. Ebeling, "High efficiency selectively oxidized MBE grown vertical-cavity surface-emitting lasers," Electron. Leu. 32, pp. 557-558, 1996.
-
(1996)
Electron. Leu
, vol.32
, pp. 557-558
-
-
Weigl, B.1
Grabherr, M.2
Reiner, G.3
Ebeling, K.J.4
-
68
-
-
0030212209
-
High power single-mode selectively oxidized vertical-cavity surface-emitting lasers
-
B. Weigl, M. Grabherr, R. Michalzik, G. Reiner, and K.J. Ebeling, "High power single-mode selectively oxidized vertical-cavity surface-emitting lasers," IEEE Phot. Tech. Lett. 8, pp. 971-973, 1996.
-
(1996)
IEEE Phot. Tech. Lett
, vol.8
, pp. 971-973
-
-
Weigl, B.1
Grabherr, M.2
Michalzik, R.3
Reiner, G.4
Ebeling, K.J.5
-
69
-
-
0031259371
-
Efficiency single-mode oxide-confined gaas vcsel's emitting in the 850 nm wavelength regime
-
M. Grabherr, R. Hager, R. Michalzik, B. Weigl, G. Reiner, and K.J. Ebeling, "Efficiency single-mode oxide-confined GaAs VCSEL's emitting in the 850 nm wavelength regime," IEEE Phot. Tech. Lett. 9, pp. 1304-1306, 1997.
-
(1997)
IEEE Phot. Tech. Lett
, vol.9
, pp. 1304-1306
-
-
Grabherr, M.1
Hager, R.2
Michalzik, R.3
Weigl, B.4
Reiner, G.5
Ebeling, K.J.6
-
70
-
-
0030085024
-
High-frequency modulation of oxide-confined vertical-cavity surface-emitting laser
-
K.L. Lear, A. Mar, K.D. Choquette, S.P. Kilcoyne, R.P. Schneider, Jr., and K.M Geib, "High-frequency modulation of oxide-confined vertical-cavity surface-emitting laser," Electron. Lett. 32, pp. 457-458, 1996.
-
(1996)
Electron. Lett
, vol.32
, pp. 457-458
-
-
Lear, K.L.1
Mar, A.2
Choquette, K.D.3
Kilcoyne, S.P.4
Schneider, R.P.5
Geib, K.M.6
-
71
-
-
0030737282
-
High-speed characteristics of low-optical loss oxide-Apertured vertical-cavity lasers
-
B.J. Thibeault, K. Bertilsson, E.R. Hegblom, E. Strzelecka, P.D. Floyd, R. Naone, and L.A. Coldren, "High-speed characteristics of low-optical loss oxide-Apertured vertical-cavity lasers," IEEE Phot. Tech. Lett. 9, pp. 11-13, 1997.
-
(1997)
IEEE Phot. Tech. Lett
, vol.9
, pp. 11-13
-
-
Thibeault, B.J.1
Bertilsson, K.2
Hegblom, E.R.3
Strzelecka, E.4
Floyd, P.D.5
Naone, R.6
Coldren, L.A.7
-
72
-
-
84975574866
-
Effective index model for vertical-cavity surface-emitting lasers
-
G. R. Hadley, "Effective index model for vertical-cavity surface-emitting lasers ", Opt. Lett. 20, pp. 1483-1485, 1995.
-
(1995)
Opt. Lett
, vol.20
, pp. 1483-1485
-
-
Hadley, G.R.1
-
73
-
-
0029769406
-
Dielectric apertures as intracavity lenses in vertical-cavity lasers
-
Jan
-
L.A. Coldren, B.J. Thibeault, E.R. Hegblom, G.B. Thompson, and J.W. Scott, "Dielectric apertures as intracavity lenses in vertical-cavity lasers," Appl. Phys. Lett. 68, pp. 313-315, Jan. 1996.
-
(1996)
Appl. Phys. Lett
, vol.68
, pp. 313-315
-
-
Coldren, L.A.1
Thibeault, B.J.2
Hegblom, E.R.3
Thompson, G.B.4
Scott, J.W.5
-
74
-
-
0030150175
-
Reduced optical scattering loss in vertical-cavity lasers using a thin (300a) oxide aperture
-
B.J. Thibeault, E.R. Hegblom, P.D. Floyd, R. Naone, Y. Akulova, and L.A. Coldren, "Reduced optical scattering loss in vertical-cavity lasers using a thin (300A) oxide aperture," IEEE Phot. Tech. Lett. 8, pp. 593-595, 1996.
-
(1996)
IEEE Phot. Tech. Lett
, vol.8
, pp. 593-595
-
-
Thibeault, B.J.1
Hegblom, E.R.2
Floyd, P.D.3
Naone, R.4
Akulova, Y.5
Coldren, L.A.6
-
76
-
-
0031109215
-
Scattering losses from dielectric apertures in vertical-cavity lasers
-
E.R. Hegblom, D.I. Babic, B.J. Thibeault, and L.A. Coldren, "Scattering losses from dielectric apertures in vertical-cavity lasers," IEEE J. Sel. Top. Quant. Electron. 3, pp. 379-389, 1997.
-
(1997)
IEEE J. Sel. Top. Quant. Electron
, vol.3
, pp. 379-389
-
-
Hegblom, E.R.1
Babic, D.I.2
Thibeault, B.J.3
Coldren, L.A.4
-
77
-
-
0031354350
-
Design of alasoxidized vcsels with stable fundamental mode operation
-
B. Demeulenaere, B. Dhoedt, and R. Baets, "Design of AlAsoxidized VCSELs with stable fundamental mode operation," Proceedings of the 10th Annual Meeting of the IEEE Lasers and Electro-Optics Society, vol. 2, pp. 352-353, 1997.
-
(1997)
Proceedings of the 10th Annual Meeting of the IEEE Lasers and Electro-Optics Society
, vol.2
, pp. 352-353
-
-
Demeulenaere, B.1
Dhoedt, B.2
Baets, R.3
-
78
-
-
0031361796
-
Calculation of vcsel lasing mode threshold gain with the weighted index method
-
M.J. Noble, J.P. Loehr, and J.A. Lott, "Calculation of VCSEL lasing mode threshold gain with the weighted index method, "Proceedings of the 10th Annual Meeting of the IEEE Lasers and Electro-Optics Society, vol. 2, pp. 354-355, 1997.
-
(1997)
Proceedings of the 10th Annual Meeting of the IEEE Lasers and Electro-Optics Society
, vol.2
, pp. 354-355
-
-
Noble, M.J.1
Loehr, J.P.2
Lott, J.A.3
-
79
-
-
0031382750
-
Self-consistent calculation of the lasing eigenmode of the dielectrically apertured fabry-perot microcavity with idealized or distributed bragg reflectors
-
December
-
Q. Deng and D.G. Deppe, "Self-consistent calculation of the lasing eigenmode of the dielectrically apertured Fabry-Perot microcavity with idealized or distributed Bragg reflectors," IEEE J. Quant. Electron., 33, no. 12 (December, 1997).
-
(1997)
IEEE J. Quant. Electron
, vol.33
, Issue.12
-
-
Deng, Q.1
Deppe, D.G.2
-
80
-
-
0031185377
-
Comparison of verticalcavity surface-emitting lasers with half-wave cavity spacers confined by single-or double-oxide apertures
-
T.-H. Oh, D.L. Huffaker, and D.G. Deppe, "Comparison of verticalcavity surface-emitting lasers with half-wave cavity spacers confined by single-or double-oxide apertures," IEEE Phot. Tech. Lett., 9, pp. 875-877, 1997.
-
(1997)
IEEE Phot. Tech. Lett
, vol.9
, pp. 875-877
-
-
Oh, T.-H.1
Huffaker, D.L.2
Deppe, D.G.3
-
81
-
-
0000723266
-
Surface energy model for the thickness dependence of the lateral oxidation of alas
-
R.L. Naone and L.A. Coldren, "Surface energy model for the thickness dependence of the lateral oxidation of AlAs," J. Appl. Phys. 82, pp. 2277-2280, 1997.
-
(1997)
J. Appl. Phys
, vol.82
, pp. 2277-2280
-
-
Naone, R.L.1
Coldren, L.A.2
-
82
-
-
0031258734
-
Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers
-
W.W. Chow, K.D. Choquette, M.H. Crawford, K.L. Lear, and G.R. Hadley, "Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers," IEEE J. Quant. Electron. 33, pp. 1810-1824, 1997.
-
(1997)
IEEE J. Quant. Electron
, vol.33
, pp. 1810-1824
-
-
Chow, W.W.1
Choquette, K.D.2
Crawford, M.H.3
Lear, K.L.4
Hadley, G.R.5
-
83
-
-
0030189343
-
Laterally oxidized long wavelength cw vertical-cavity lasers
-
N.M. Margalit, D.I. Babic, K. Streubel, R.P. Mirin, D.E. Mars, J.E. Bowers, and E.L. Hu, "Laterally oxidized long wavelength CW vertical-cavity lasers," Appl. Phys. Lett. 69, pp. 471-472, 1996.
-
(1996)
Appl. Phys. Lett
, vol.69
, pp. 471-472
-
-
Margalit, N.M.1
Babic, D.I.2
Streubel, K.3
Mirin, R.P.4
Mars, D.E.5
Bowers, J.E.6
Hu, E.L.7
-
84
-
-
0031558189
-
Long wavelength (1.3 ?m) vertical-cavity surface-emitting lasers with a wafer bonded mirror and an oxygen-implanted confinement region
-
Y. Qian, Z.H. Zhu, Y.H. Lo, D.L. Huffaker, D.G. Deppe, H.Q. Hou, B.E. Hammons, W. Lin, and Y.K. Tu, "Long wavelength (1.3 ?m) vertical-cavity surface-emitting lasers with a wafer bonded mirror and an oxygen-implanted confinement region," Appl. Phys. Lett. 71, pp. 25-27, 1997.
-
(1997)
Appl. Phys. Lett
, vol.71
, pp. 25-27
-
-
Qian, Y.1
Zhu, Z.H.2
Lo, Y.H.3
Huffaker, D.L.4
Deppe, D.G.5
Hou, H.Q.6
Hammons, B.E.7
Lin, W.8
Tu, Y.K.9
-
85
-
-
0000467932
-
Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture
-
D.L. Huffaker, O. Baklenov, L.A. Graham, B.G. Streetman, and D. G. Deppe, "Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture," Appl. Phys. Lett., 70, pp. 2356-2358, 1997.
-
(1997)
Appl. Phys. Lett
, vol.70
, pp. 2356-2358
-
-
Huffaker, D.L.1
Baklenov, O.2
Graham, L.A.3
Streetman, B.G.4
Deppe, D.G.5
-
86
-
-
0031551233
-
Low-threshold continuous-wave operation of an oxide-confined vertical-cavity surface-emitting laser based on a quantum dot active region and half-wave cavity
-
D.L. Huffaker, L.A. Graham, and D.G. Deppe, "Low-Threshold Continuous-Wave Operation of an Oxide-Confined Vertical-Cavity Surface-Emitting Laser Based on a Quantum Dot Active Region and Half-Wave Cavity," Electron. Lett. 33, pp. 1225-1226 (1997).
-
(1997)
Electron. Lett
, vol.33
, pp. 1225-1226
-
-
Huffaker, D.L.1
Graham, L.A.2
Deppe, D.G.3
-
87
-
-
0031166844
-
Vertical cavity lasers based on vertically coupled quantum dots
-
J.A. Lott, N.N. Ledentsov, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov, and D. Bimberg, "Vertical cavity lasers based on vertically coupled quantum dots," Electron. Lett., 33, pp. 1150-1151, 1997.
-
(1997)
Electron. Lett
, vol.33
, pp. 1150-1151
-
-
Lott, J.A.1
Ledentsov, N.N.2
Ustinov, V.M.3
Egorov, A.Yu.4
Zhukov, A.E.5
Kop'Ev, P.S.6
Alferov, Zh.I.7
Bimberg, D.8
-
88
-
-
0031996455
-
1.15 p.m Wavelength Oxide-Confined Quantum Dot Vertical-Cavity Surface-Emitting Laser
-
February
-
D.L. Huffaker, H. Deng, and D.G. Deppe, "1.15 p.m Wavelength Oxide-Confined Quantum Dot Vertical-Cavity Surface-Emitting Laser," IEEE Phot. Tech. Lett. 10, (February, 1998).
-
(1998)
IEEE Phot. Tech. Lett
, vol.10
-
-
Huffaker, D.L.1
Deng, H.2
Deppe, D.G.3
-
89
-
-
0030288960
-
-
H. Saito, K. Nishi, I. Ogura, S. Sugov, and Y. Sugimoto, Appl. Phys. Lett. 69, pp. 3140-3142, 1996.
-
(1996)
Appl. Phys Lett
, vol.69
, pp. 3140-3142
-
-
Saito, H.1
Nishi, K.2
Ogura, I.3
Sugov, S.4
Sugimoto, Y.5
-
90
-
-
4043084368
-
Wide-bandwidth distributed bragg reflectors using oxide/gaas multilayers
-
M. H. MacDougal, H. Zhao, P. D. Dapkus, M. Ziari, and W. H. Seier, "Wide-bandwidth distributed Bragg reflectors using oxide/GaAs multilayers ", Electron. Lett. 31, pp. 886-888, 1995.
-
(1995)
Electron. Lett
, vol.31
, pp. 886-888
-
-
MacDougal, M.H.1
Zhao, H.2
Dapkus, P.D.3
Ziari, M.4
Seier, W.H.5
-
91
-
-
0028768364
-
Photopumped room-temperature edge-And vertical-cavity operation of a1gaas-gaas-ingaas quantum well heterostructure lasers utilizing native-oxide mirrors
-
M.J. Ries, T.A. Richard, S.A. Maranowski, N. Holonyak, Jr., and E. I. Chen, "Photopumped room-temperature edge-And vertical-cavity operation of A1GaAs-GaAs-InGaAs quantum well heterostructure lasers utilizing native-oxide mirrors," Appl. Phys. Lett. 65, pp. 740-742, 1994.
-
(1994)
Appl. Phys. Lett
, vol.65
, pp. 740-742
-
-
Ries, M.J.1
Richard, T.A.2
Maranowski, S.A.3
Holonyak, N.4
Chen, E.I.5
-
92
-
-
0029253895
-
Gain-switching in a vertical-cavity laser with high-contrast mirrors
-
H. Deng, D.L. Huffaker, J. Shin, and D.G. Deppe, "Gain-switching in a vertical-cavity laser with high-contrast mirrors," Electron. Lett. 31, pp. 278-279, 1995.
-
(1995)
Electron. Lett
, vol.31
, pp. 278-279
-
-
Deng, H.1
Huffaker, D.L.2
Shin, J.3
Deppe, D.G.4
-
93
-
-
0029406841
-
Transverse and temporal mode dependence on mirror contrast in microcavity lasers
-
H. Deng, Q. Deng, D.G. Deppe, D.L. Huffaker, and J. Shin, "Transverse and temporal mode dependence on mirror contrast in microcavity lasers," IEEE J. Quant. Electron. 31, pp. 2026-2036, 1995.
-
(1995)
IEEE J. Quant. Electron
, vol.31
, pp. 2026-2036
-
-
Deng, H.1
Deng, Q.2
Deppe, D.G.3
Huffaker, D.L.4
Shin, J.5
-
94
-
-
0029267483
-
Ultralow threshold current vertical-cavity surface-emitting laser with alas oxide/gaas distributed bragg reflectors
-
M.H. MacDougal, P.D. Dapkus, V. Pudikov, H. Zhao, and G.M. Yang, "Ultralow threshold current vertical-cavity surface-emitting laser with AlAs oxide/GaAs distributed Bragg reflectors," IEEE Phot. Tech. Lett. 7, pp. 229-231, 1995.
-
(1995)
IEEE Phot. Tech. Lett
, vol.7
, pp. 229-231
-
-
MacDougal, M.H.1
Dapkus, P.D.2
Pudikov, V.3
Zhao, H.4
Yang, G.M.5
-
95
-
-
0030107958
-
Electrically-pumped vertical-cavity lasers with alxoy-gaas reflectors
-
M.H. MacDougal, G.M. Yang, A.E. Bond, C.-K. Lin, D. Tishinin, and P.D. Dapkus, "Electrically-pumped vertical-cavity lasers with AlxOy-GaAs reflectors," IEEE Phot. Tech. Lett. 8, pp. 310-312, 1996.
-
(1996)
IEEE Phot. Tech. Lett
, vol.8
, pp. 310-312
-
-
MacDougal, M.H.1
Yang, G.M.2
Bond, A.E.3
Lin, C.-K.4
Tishinin, D.5
Dapkus, P.D.6
-
96
-
-
0031557559
-
Low threshold vertical-cavity surface-emitting lasers based on high contrast distributed bragg reflectors
-
D.L. Huffaker and D.G. Deppe, "Low threshold vertical-cavity surface-emitting lasers based on high contrast distributed Bragg reflectors," Appl. Phys. Lett. 70, 1781-1783, 1997.
-
(1997)
Appl. Phys. Lett
, vol.70
, pp. 1781-1783
-
-
Huffaker, D.L.1
Deppe, D.G.2
-
97
-
-
0038832279
-
Photopumped laser operation of a planar disorder-And native-oxide-defined alas-gaas photonic lattice
-
M.J. Ries, E.I. Chen, and N. Holonyak, Jr., "Photopumped laser operation of a planar disorder-And native-oxide-defined AlAs-GaAs photonic lattice," Appl. Phys. Lett. 68, pp. 2035-2037, 1996.
-
(1996)
Appl. Phys. Lett
, vol.68
, pp. 2035-2037
-
-
Ries, M.J.1
Chen, E.I.2
Holonyak, N.3
-
98
-
-
0005367243
-
Photopumped laser operation of an oxide post gaas-Alas superlattice photonic lattice
-
P.W. Evans, J.J. Wierer, and N. Holonyak, Jr., "Photopumped laser operation of an oxide post GaAs-AlAs superlattice photonic lattice," Appl. Phys. Lett. 70, pp. 1119-1121, 1997.
-
(1997)
Appl. Phys. Lett
, vol.70
, pp. 1119-1121
-
-
Evans, P.W.1
Wierer, J.J.2
Holonyak, N.3
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