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Volumn 33, Issue 4, 1997, Pages 330-331

57% Wallplug efficiency oxide-confined 850nm wavelength GaAs VCSELs

Author keywords

Gallium arsenide; Vertical cavity surface emitting lasers

Indexed keywords

GRADIENT INDEX OPTICS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

EID: 0031079120     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970193     Document Type: Article
Times cited : (152)

References (13)
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    • HAYASHI, Y., MUKAIHARA, T., HATORI, N., OHNOKI, N., MATSUTANI, A., KOYAMA, F., and IGA, K.: 'Lasing characteristics of low-threshold oxide confinement InGaAs-GaA1As vertical-cavity surface-emitting lasers', IEEE Photonics Technol. Lett., 1995, 7, pp. 1234-1236
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    • Oxide-confined 850nm vertical-cavity lasers for multimode-fibre data communications
    • SCHNEIDER, R.P., Jr., TAN, M.R.T., CORZINE, S.W., and WANG, S.Y.: 'Oxide-confined 850nm vertical-cavity lasers for multimode-fibre data communications', Electron. Lett., 1996, 32, pp. 1300-1302
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.