Index guiding dependent effects in implant and oxide confined vertical-cavity lasers

IEEE Photonics Technology Letters

Volumn 8, Issue 6, 1996, Pages 740-742

  Lear, K L ^a,b   Schneider Jr , R P ^b   Choquette, K D ^b   Kilcoyne, S P ^a,b  

^a IEEE

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFRACTION; ELECTRIC CURRENTS; ELECTRIC LOSSES; ION IMPLANTATION; LENSES; METALLORGANIC VAPOR PHASE EPITAXY; OXIDATION; PROTONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

LIGHT CURRENT CHARACTERISTICS; OPTICAL LOSS; PROTON IMPLANTATION; THRESHOLD CURRENT DENSITY; VERTICAL CAVITY SURFACE EMITTING LASERS; WET THERMAL OXIDATION; WET THERMAL OXIDATION RATE;

SEMICONDUCTOR LASERS;

EID: 0030165781     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.502079     Document Type: Article

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