Oxide-confined vertical-cavity laser with additional etched void confinement

Electronics Letters

Volumn 32, Issue 10, 1996, Pages 900-901

  Deng, H ^a   Deppe, D G ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Semiconductor junction lasers; Vertical cavity surface emitting lasers

Indexed keywords

ELECTRIC CURRENTS; ETCHING; MIRRORS; MOLECULAR BEAM EPITAXY; OXIDES; PHOTONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS;

DISTRIBUTED BRAGG REFLECTORS; ELECTRON BEAM EVAPORATION; FAR FIELD RADIATION PATTERN; OPTICAL MODE CONFINEMENT; SELECTIVE WET ETCHING; SEMICONDUCTOR JUNCTION LASERS; THRESHOLD CURRENTS; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0030576246     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960579     Document Type: Article

References (9)

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