Vertical cavity lasers based on vertically coupled quantum dots

Electronics Letters

Volumn 33, Issue 13, 1997, Pages 1150-1151

  Lott, J A ^a   Ledentsov, N N ^b   Ustinov, V M ^b   Egorov, A Yu ^b   Zhukov, A E ^b   Kop'ev, P S ^b   Alferov, Zh I ^b   Bimberg, D ^c  

^a AIR FORCE INSTITUTE OF TECHNOLOGY   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Semiconductor quantum dots; Vertical cavity surface emitting lasers

Indexed keywords

CONTINUOUS WAVE LASERS; ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; LIGHT EMISSION; MIRRORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS;

DISTRIBUTED BRAGG REFLECTORS (DBR); VERTICAL CAVITY LASERS (VCL);

SEMICONDUCTOR LASERS;

EID: 0031166844     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970785     Document Type: Article

References (10)

1. KIRSTAEDTER, N., LEDENTSOV, N.N., GRUNDMANN, M., BIMBERG, D., USTINOV, V.M., RUVIMOV, S.S., MAXIMOV, M.V., KOP'EV, P.S., ALFEROV, ZH.I., RICHTER, U., WERNER, P., GÖSELE, U., and HEYDENREICH, J.: 'Low threshold, large To injection laser emission from (InGa)As quantum dots', Electron. Lett., 1994, 30, (17), pp. 1416-1417
2. KAMATH, K., BHATTACHARYA, P., SOSNOWSKI, T., NORRIS, T., and PHILLIPS. J.: 'Room-temperature operation of InGaAs/GaAs self-organised quantum dot lasers', Electron. Lett., 1996, 32, (15), pp. 1374-1375
3. SCHUR, R., SOGAWA, F., NISHIOKA, M., ISHIDA, S., and ARAKAWA, Y.: 'Fabrication of vertical microcavity lasers with InGaAs/GaAs quantum dots formed by spinodal phase separation'. Proc. 15th IEEE International Semiconductor Laser Conf., Haifa, Israel, 13-18 October 1997, Paper PDP3, pp. 6-7
4. SAITO, H., NISHI, K., OGURA, I., SUGOU, S., and SUGIMOTO, Y.: 'Room-temperature lasing operation of a quantum dot vertical-cavity surface-emitting laser', Appl. Phys. Lett., 1996, 69, (21), pp. 3140-3142
5. HUFFAKER, D.L., BAKLENOV, O., GRAHAM, L.A., STREETMAN, B.G., and DEPPE, D.G.: 'Quantum dot vertical cavity surface emitting laser with a dielectric aperture', Appl. Phys. Lett., 1997, 70, (17), pp. 2356-2358
6. LEDENTSOV, N.N., SHCHUKIN, V.A., GRUNDMANN, M., KIRSTAEDTER, N., BÖHRER, J., SCHMIDT, O., BIMBERG, D., USTINOV, V.M., EGOROV, A.YU., ZHUKOV, A.E., KOP'EV, P.S., ZAITSEV, S.V., GORDEEV, N.YU., ALFEROV, ZH.I., BOROVKOV, A.I., KOSOGOV, A.O., RUVIMOV, S.S., WERNER, P., GÖSELE, U., and HEYDENREICH, J.: 'Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth', Phys. Rev. B, 1996, 54, (12), pp. 8743-8750 (and references therein)
7. MACDOUGAL, M.H., YANG, G.M., BOND, A.E., LIN, C.-K., TISHININ, D., and DAPKUS, P.D.: 'Electrically-pumped vertical-cavity lasers with AlxOy-GaAs reflectors', IEEE Photonics Technol. Lett., 1996, 8, (3), pp. 310-312
8. KOSOGOV, A.O., WERNER, P., GÖSELE, U., LEDENTSOV, N.N., BIMBERG, D., USTINOV, V.M., EGOROV, A.YU., ZHUKOV, A.E., KOP'EV, P.S., BERT, N.A., and ALFEROV, ZH.I.: 'Structural and optical properties of InAs-GaAs quantum dots subjected to high temperature annealing', Appl. Phys. Lett., 1996, 69, (20), pp. 3072-3074
9. ZHUKOV, A.E., EGOROV, A.YU., KOVSH, A.R., USTINOV, V.M., MAXIMOV, M.V., TSATSUL'NIKOV, A.F., LEDENTSOV, N.N., GORDEEV, N.YU., ZAITSEV, S.V., KOP'EV, P.S., and ALFEROV, ZH.I.: 'Thermal stability of vertically coupled InAs-GaAs quantum dot arrays', Semiconductors, 1991, 31, pp. 84-87 Fiz. Tekh. Poluprovodn., 1997, 31, pp. 104-108
10. ZHUKOV, A.E., EGOROV, A.YU., KOVSH, A.R., USTINOV, V.M., MAXIMOV, M.V., TSATSUL'NIKOV, A.F., LEDENTSOV, N.N., GORDEEV, N.YU., ZAITSEV, S.V., KOP'EV, P.S., and ALFEROV, ZH.I.: 'Thermal stability of vertically coupled InAs-GaAs quantum dot arrays', Semiconductors, 1991, 31, pp. 84-87 Fiz. Tekh. Poluprovodn., 1997, 31, pp. 104-108