Wet thermal oxidation of AIAsSb against As/Sb ratio

Electronics Letters

Volumn 33, Issue 12, 1997, Pages 1097-1099

  Blum, O ^a   Hafich, M J ^a   Klem, J F ^a   Baucom, K ^a   Allerman, A ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Oxidation; Semiconductor technology

Indexed keywords

ARSENIC; SEMICONDUCTING ANTIMONY; THERMOOXIDATION;

STEAM OXIDATION;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0031554338     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970684     Document Type: Article

References (5)

1. 1-xAs-AlAs-Ga As quantum well heterostructures and superlattices', Appl. Phys. Lett., 1990, 57, pp. 2844-2846
2. BLUM. O., GEIB, K.M., HAFICH, M.J., KLEM, J.F., and ASHBY, C.I.H.: 'Wet thermal oxidation of AlAsSb lattice matched to InP for optoelectronic applications', Appl. Phys. Lett., 1996, 68, pp. 3129-3131.
3. 1-xAs-GaAs quantum well heterostructure lasers', Appl. Phys. Lett., 1991, 58, pp. 394-396
4. Private communication with S. Kurtz
5. SHIBATA, T., NAKATA, J., NANISHI, Y., and FUJIMOTO, M.: 'A Rutherford backscattering spectroscopic study of the aluminum antimonide oxidation process in air', Jpn. J. Appl. Phys., 1994, 33, pp. 1767-1772