-
1
-
-
0004607079
-
1-xAs-AlAs-GaAs quantum well heterostructures and superlattices
-
1-xAs-AlAs-GaAs quantum well heterostructures and superlattices," Appl. Phys. Lett., vol. 57, pp. 2844-2846, 1990.
-
(1990)
Appl. Phys. Lett.
, vol.57
, pp. 2844-2846
-
-
Dallesasse, J.M.1
Holonyak Jr., N.2
Sugg, A.R.3
Richard, T.J.4
El-Zein, N.5
-
2
-
-
0028764159
-
Native-oxide defined buried ring contact for low threshold vertical-cavity lasers
-
D. L. Huffaker, D. G. Deppe, K. Kumar, and T. J. Rogers, "Native-oxide defined buried ring contact for low threshold vertical-cavity lasers," Appl. Phys. Lett., vol. 65, pp. 97-99, 1994.
-
(1994)
Appl. Phys. Lett.
, vol.65
, pp. 97-99
-
-
Huffaker, D.L.1
Deppe, D.G.2
Kumar, K.3
Rogers, T.J.4
-
3
-
-
0000933523
-
Long-wavelength (1.3 μm) luminescence in InGaAs strained quantum-well structures grown on GaAs
-
E. J. Roan and K. Y. Cheng, "Long-wavelength (1.3 μm) luminescence in InGaAs strained quantum-well structures grown on GaAs," Appl. Phys. Lett., vol. 59, pp. 2688-2690, 1991.
-
(1991)
Appl. Phys. Lett.
, vol.59
, pp. 2688-2690
-
-
Roan, E.J.1
Cheng, K.Y.2
-
5
-
-
0029509799
-
1.3 μm photoluminescence from InGaAs quantum dots on GaAs
-
R. Mirin, J. Ibbetson, K. Nishi, A. Gossard, and J. Bowers, "1.3 μm photoluminescence from InGaAs quantum dots on GaAs," Appl. Phys. Lett., vol. 67, pp. 3795-3797, 1995.
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 3795-3797
-
-
Mirin, R.1
Ibbetson, J.2
Nishi, K.3
Gossard, A.4
Bowers, J.5
-
6
-
-
0031143077
-
Room temperature continuous-wave photopumped operation of 1.22 μm GaInNAs/GaAs single quantum well vertical-cavity surface-emitting laser
-
M. C. Larson, M. Kondow, T. Kitatani, Y. Yazawa, and M. Okai, "Room temperature continuous-wave photopumped operation of 1.22 μm GaInNAs/GaAs single quantum well vertical-cavity surface-emitting laser," Electron. Lett., vol. 33, pp. 959-960, 1997.
-
(1997)
Electron. Lett.
, vol.33
, pp. 959-960
-
-
Larson, M.C.1
Kondow, M.2
Kitatani, T.3
Yazawa, Y.4
Okai, M.5
-
7
-
-
0031186313
-
Quantum dot resonant cavity photodiode with operation near 1.3 μm wavelength
-
J. C. Campbell, D. L. Huffaker, H. Deng, and D. G. Deppe, "Quantum dot resonant cavity photodiode with operation near 1.3 μm wavelength," Electron. Lett., vol. 33, pp. 1337-1339, 1997.
-
(1997)
Electron. Lett.
, vol.33
, pp. 1337-1339
-
-
Campbell, J.C.1
Huffaker, D.L.2
Deng, H.3
Deppe, D.G.4
-
8
-
-
0000467932
-
Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture
-
D. L. Huffaker, O. Baklenov, L. A. Graham, B. G. Streetman, and D. G. Deppe, "Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture," Appl. Phys. Lett., vol. 70, pp. 2356-2358, 1997.
-
(1997)
Appl. Phys. Lett.
, vol.70
, pp. 2356-2358
-
-
Huffaker, D.L.1
Baklenov, O.2
Graham, L.A.3
Streetman, B.G.4
Deppe, D.G.5
-
9
-
-
0031166844
-
Vertical cavity lasers based on vertically coupled quantum dots
-
J. A. Lott, N. N. Ledentsov, V. M. Ustinov, A. Y. Egorov, A. E. Zhukov, P. S. Kop'ev, Z. I. Alferov, and D. Bimberg, "Vertical cavity lasers based on vertically coupled quantum dots," Electron. Lett., vol. 33, pp. 1150-1151, 1997.
-
(1997)
Electron. Lett.
, vol.33
, pp. 1150-1151
-
-
Lott, J.A.1
Ledentsov, N.N.2
Ustinov, V.M.3
Egorov, A.Y.4
Zhukov, A.E.5
Kop'ev, P.S.6
Alferov, Z.I.7
Bimberg, D.8
-
10
-
-
0001101497
-
Emission from discrete levels in self-formed InGaAs/GaAs quantum dots by electric carrier injection: Influence of phonon bottleneck
-
K. Mukai, N. Ohtsuka, H. Shoji, and M. Sugawara, "Emission from discrete levels in self-formed InGaAs/GaAs quantum dots by electric carrier injection: Influence of phonon bottleneck," Appl. Phys. Lett., vol. 68, pp. 3013-3015, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 3013-3015
-
-
Mukai, K.1
Ohtsuka, N.2
Shoji, H.3
Sugawara, M.4
-
11
-
-
0031212406
-
High-performance 1.06-μm selectively oxidized vertical-cavity surface-emitting lasers with InGaAs-GaAsP strain-compensated quantum wells
-
H. Q. Hou, K. D. Choquette, K. M. Geib, and B. E. Hammons, "High-performance 1.06-μm selectively oxidized vertical-cavity surface-emitting lasers with InGaAs-GaAsP strain-compensated quantum wells," IEEE Photon. Technol. Lett., vol. 9, pp. 1057-1059, 1997.
-
(1997)
IEEE Photon. Technol. Lett.
, vol.9
, pp. 1057-1059
-
-
Hou, H.Q.1
Choquette, K.D.2
Geib, K.M.3
Hammons, B.E.4
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