High-frequency modulation of oxide-confined vertical cavity surface emitting lasers

Electronics Letters

Volumn 32, Issue 5, 1996, Pages 457-458

  Lear, K L ^a   Mar, A ^a   Choquette, K D ^a   Kilcoyne, S P ^a,b   Schneider Jr , R P ^a,c   Geib, K M ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b Optical Concepts Inc   (United States)

^c HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

Optical modulation; Semiconductor junction lasers; Vertical cavity surface emitting lasers

Indexed keywords

BANDWIDTH; ELECTRIC CURRENTS; FREQUENCY MODULATION; LIGHT MODULATION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL VARIABLES MEASUREMENT; OXIDATION; OXIDES; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

CONTINUOUS WAVE LASER CHARACTERISTICS; CURRENT EFFICIENCY FACTORS; HIGH FREQUENCY MODULATION; SEMICONDUCTOR JUNCTION LASERS; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0030085024     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960334     Document Type: Article

References (11)

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