High efficiency selectively oxidised MBE grown vertical-cavity surface-emitting lasers

Electronics Letters

Volumn 32, Issue 6, 1996, Pages 557-558

  Weigl, B ^a   Grabherr, M ^a   Reiner, G ^a   Ebeling, K J ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

Molecular beam epitaxial growth; Vertical cavity surface emitting lasers

Indexed keywords

BERYLLIUM; MOLECULAR BEAM EPITAXY; OPTICAL INTERCONNECTS; OXIDATION; PERFORMANCE; SEMICONDUCTOR DOPING;

OXIDIZED MOLECULAR BEAM EPITAXIAL GROWTH; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0030106607     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960397     Document Type: Article

References (6)

1. LEAR, K.L., CHOQUETTE, K.D., SCHNEIDER, R.P., KILCOYNE, S.P., and GEIB, K.M.: 'Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency', Electron. Lett., 1995, 31, (24), pp. 208-209
2. ZHAO, H., MACDOUGAL, H.M., FRATESCHI, N.C., SIALA, S., DAPKUS, P.D., and NOTTENBURG, R.N.: 'High efficiency InGaAs/GaAs single-quantum-well lasers using single-step metalorganic chemical vapour deposition', IEEE Photonics Technol. Lett, 1994, 6, pp. 468-470
3. CHOQUETTE, K.D., SCHNEIDER, R.P., LEAR, K.L., and GEIB, K.M.: 'Low threshold voltage vertical-cavitiy lasers fabricated by selective oxidation', Electron. Lett., 1995, 30, (24), pp. 2043-2044
4. 0.67As with Sn, Si and Be: A comparative study', J. Crystal Growth, 1991, 111, pp. 239-245
5. REINER, G., ZEEB, E., MÖLLER, B., RIES, M., and EBELING, K.J.: 'Optimization of planar Be-doped InGaAs VCSELs with two-sided output', Photonics Technol. Lett., 1995, 7, (7), pp. 730-732
6. HADLEY, G.R.: 'Effective index model for vertical-cavity surface-emitting lasers', Opt. Lett., 1995, 20, (13), pp. 1483-1485