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Volumn 69, Issue 1, 1996, Pages 19-21

Microstructure of laterally oxidized AlxGa1-xAs layers in vertical-cavity lasers

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000377928     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118103     Document Type: Article
Times cited : (76)

References (17)
  • 9
    • 85033016318 scopus 로고    scopus 로고
    • The maximum temperature reached during sample preparation was ∼110°C for total time of ∼30 min.
    • The maximum temperature reached during sample preparation was ∼110°C for total time of ∼30 min.
  • 10
  • 11
    • 85032999686 scopus 로고    scopus 로고
    • JCPDS file 10-425
    • JCPDS file 10-425.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.