SCOPUS 정보 검색 플랫폼

Semiconductor Science and Technology

Volumn 17, Issue 7, 2002, Pages 655-661

Strained Si/SiGe n-channel MOSFETs: Impact of cross-hatching on device performance

(8) Olsen, S H a O'Neill, A G a Norris, D J b Cullis, A G b Woods, N J c Zhang, J c Fobelets, K c Kemhadjian, H A d

a NEWCASTLE UNIVERSITY (United Kingdom)

b UNIVERSITY OF SHEFFIELD (United Kingdom)

c IMPERIAL COLLEGE LONDON (United Kingdom)

d UNIVERSITY OF SOUTHAMPTON (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; INTERFACES (MATERIALS); OXIDATION; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; STRAIN;

CROSS-HATCHING; OXIDATION RATE;

MOSFET DEVICES;

EID: 0036640799 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/17/7/303 Document Type: Article

Times cited : (37)

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