Piezoresistive characteristics of short-channel MOSFETs on (100) silicon

IEEE Transactions on Electron Devices

Volumn 48, Issue 9, 2001, Pages 2009-2015

  Bradley, Arthur T ^b   Jaeger, Richard C ^a,c   Suhling, Jeffrey C ^a,c   O'Connor, Kevin J ^a,d  

^a IEEE   (United States)

^b University of Tennessee   (United States)

^c AUBURN UNIVERSITY   (United States)

^d LUCENT TECHNOLOGIES   (United States)

Author keywords

(100) silicon; MOSFETs; Piezoresistance; Short channel devices; Threshold

Indexed keywords

PIEZORESISTANCE; SHORT CHANNEL DEVICES;

CARRIER MOBILITY; ELECTRIC CURRENTS; ELECTRONICS PACKAGING; SEMICONDUCTING SILICON; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0035445467     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.944190     Document Type: Article

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