Comparison of hole mobility in LOCOS-isolated thin-film SOI p-channel MOSFET's fabricated on various SOI substrates

IEEE Electron Device Letters

Volumn 20, Issue 4, 1999, Pages 176-178

  Lee, Jong Wook ^a   Kim, Hyung Ki ^a   Yang, Ji Woon ^a   Lee, Won Chang ^a   Oh, Jeong Hee ^a   Oh, Min Rok ^a   Koh, Yo Hwan ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; SEPARATION; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; THIN FILM TRANSISTORS;

SEPARATION BY IMPLANTED OXYGEN (SIMOX);

MOSFET DEVICES;

EID: 0032640759     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.753758     Document Type: Article

References (5)

1. C. L. Huang and G. J. Grula, "Degradation characteristics of STI and MESA-isolated thin-film SOI CMOS," IEEE Electron Device Lett., vol. 18, p. 474, Oct. 1997.
2. C. L. Huang, H. Soleimani, G. Grula, N. D. Arora, and A. Antoniadis, "Isolation process dependence of channel mobility in thin-film SOI devices," IEEE Electron Device Lett., vol. 17, p. 291, June 1996.
3. C.-L. Huang, H. Soleimani, G. Grula, J. Sleight, A. Villani, H. Ali, and D. A. Antoniadis, "LOCOS-induced stress effects on thin-film SOI devices," IEEE Trans. Electron Devices, vol. 44, p. 646, Apr. 1997.
4. T. Iwamatsu, Y. Yamaguchi, T. Ipposhi, S. Maegawa, Y. Inoue, and T. Nishimura, "Investigation of anomalous leakage current in mesa-isolated SOI MOSFET's," IEEE Electron Device Lett., vol. 18, p. 499, Oct. 1997.
5. M. Roser, S. R. Clayton, P. R. de la Houssaye, and G. A. Garcia, "High-mobility fully depleted thin-film SOS MOSFET's," IEEE Trans. Electron Devices, vol. 39, p. 2665. Nov. 1992.