Electrical characterization and process control of cost-effective high-k aluminum oxide gate dielectrics prepared by anodization followed by furnace annealing

IEEE Transactions on Electron Devices

Volumn 50, Issue 7, 2003, Pages 1658-1664

  Huang, Szu Wei ^a   Hwu, Jenn Gwo ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Al2O3; Anodic oxidation; High k gate dielectrics; MOS capacitor

Indexed keywords

ALUMINA; ANNEALING; ANODIC OXIDATION; CHEMICAL VAPOR DEPOSITION; COST EFFECTIVENESS; CURRENT DENSITY; DIELECTRIC DEVICES; ELECTRON TUNNELING; MOS CAPACITORS; PROCESS CONTROL;

BIASING EFFECTS;

GATES (TRANSISTOR);

EID: 0041525422     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.813904     Document Type: Article

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