Tunneling leakage current in ultrathin (<4 nm) nitride/oxide stack dielectrics

IEEE Electron Device Letters

Volumn 19, Issue 10, 1998, Pages 388-390

  Shi, Ying ^a,b   Wang, Xiewen ^a,b   Ma, T P ^a,b  

^a IEEE   (United States)

^b Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; ELECTRON TUNNELING; LEAKAGE CURRENTS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON NITRIDE; ULTRATHIN FILMS;

FOWLER-NORDHEIM REGIME;

DIELECTRIC FILMS;

EID: 0032186930     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.720195     Document Type: Article

References (13)

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