Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates

IEEE Electron Device Letters

Volumn 22, Issue 10, 2001, Pages 490-492

  Ragnarsson, L A ^a   Guha, S ^a   Bojarczuk, N A ^a   Cartier, E ^a   Fischetti, M V ^a   Rim, K ^a   Karasinski, J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Aluminum oxide; Effective mobility; Gate dielectric; High ; Remote polar phonon scattering

Indexed keywords

ATOMIC BEAMS; CARRIER MOBILITY; DEPOSITION; GATES (TRANSISTOR); SEMICONDUCTING ALUMINUM COMPOUNDS; ULTRAHIGH VACUUM;

EFFECTIVE MOBILITY;

MOSFET DEVICES;

EID: 0035473589     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.954921     Document Type: Article

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